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Welding method of target material assembly and target material assembly welding structure

A welding method and welding structure technology, which is applied in welding equipment, semiconductor devices, circuits, etc., can solve the problems that the quality of aluminum target components needs to be improved, and achieve the effects of ensuring welding strength, reducing weld width, and reducing the use of solder

Inactive Publication Date: 2018-07-03
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the quality of the aluminum target assembly formed by welding in the prior art still needs to be improved

Method used

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  • Welding method of target material assembly and target material assembly welding structure
  • Welding method of target material assembly and target material assembly welding structure
  • Welding method of target material assembly and target material assembly welding structure

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Embodiment Construction

[0038] It can be seen from the background art that the quality of the aluminum target assembly formed in the prior art still needs to be improved.

[0039] Combining with a welding method of aluminum target components, the reasons why the quality of aluminum target components needs to be improved are analyzed. figure 1 and figure 2 It is a schematic cross-sectional structure diagram corresponding to each step of a welding method for an aluminum target assembly.

[0040] refer tofigure 1 , provide an aluminum target 101 and an aluminum back plate 103 ; put solder 104 on the welding surface of the aluminum back plate 103 .

[0041] Generally, it is considered that when the aluminum target 101 and the aluminum back plate 103 are welded, the greater the amount of solder input, the greater the welding strength of the formed aluminum target assembly. For this purpose, the welding surface of the aluminum target 101 has a step 102, and correspondingly, the welding surface of the al...

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Abstract

The invention discloses a welding method of a target material assembly and a target material assembly welding structure. The welding method comprises the steps that a target material and a back plateare buckled, a step of a step area is embedded in a groove of a groove area, a first welding face of a first surrounding area and a second welding face of a second surrounding area abut against each other, an assembling gap is formed between the first welding face of the step area and the second welding face of the groove area, a welding material layer is located in the assembling gap, and the welding material layer and the first welding face of the step area make contact, after buckling, multiple pressing blocks are symmetrically placed on the back face of the target material, the pressing blocks are symmetric about the center point of the back face of the target material, after the pressing blocks are placed, the target material and the back plate are subject to heating welding treatment. Welding strength between the target material and the back plate is ensured, the appearance of the welding line between the target material and the back plate is improved, the target material is prevented from twisting and deforming towards the middle, and the quality of the welded target material assembly is improved.

Description

technical field [0001] The invention relates to the field of manufacturing semiconductor sputtering targets, in particular to a welding method of target components and a welding structure of target components. Background technique [0002] In the semiconductor industry, the target assembly is composed of a target that meets the sputtering performance, and a back plate of the target structure. The back plate plays a supporting role in the target assembly and has the effect of conducting heat. [0003] During the sputtering process, the working environment of the target assembly is relatively harsh. Specifically: the ambient temperature of the target assembly is relatively high, for example, 300°C to 600°C; in addition, one side of the target assembly is cooled by cooling water, while the other side is at ﹣9 In the high vacuum environment of Pa, a huge pressure difference is formed on the opposite side of the target component; moreover, the target component is in a high-volt...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23K1/00B23K1/06B23K101/40
Inventor 姚力军潘杰相原俊夫王学泽廖培君
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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