Transistor, display substrate, display device and manufacturing method thereof

Abstract

The invention provides a transistor, a display substrate, a display device and a manufacturing method thereof, and belongs to the field of semiconductors. The transistor comprises a semiconductor structure; the semiconductor structure comprises: a source region, a drain region, a channel region and a capture region, wherein the channel region is located between the source region and the drain region and is constructed as a carrier migration passage between the source region and the drain region in the on-state of the transistor; and the capture region is at least partially embedded in the channel region and is constructed to capture carriers migrating between the source region and the drain region in the off-state of the transistor. Based on the design of embedding the capture region intothe channel region, in the invention, the migration carrier of the off-state leakage current can be restrained by using the capture region, thus the off-state leakage current of the transistor can bereduced, and the performance of relevant devices and products is enhanced.

Description

technical field [0001] The present disclosure relates to the field of semiconductors, in particular to a transistor, a display substrate, a display device and a manufacturing method thereof. Background technique [0002] An ideal switching element should have an infinite switching resistance in the off state, resulting in zero leakage current between the switching contacts. However, in real-world scenarios, switching elements inevitably have a certain off-state leakage current, which may adversely affect product performance. For example, a transistor is used in a display device to control the writing and holding of display data in each pixel. The leakage current of the transistor in the off state will make the pixel unable to maintain the display state for a long time, so that the display device must refresh the screen at a certain frequency or more. This makes display products have high power consumption when displaying static images. Moreover, the existence of the off-st...

AI Technical Summary

Problems solved by technology

However, in real-world scenarios, switching elements always have a certain off-state leakage current, which may adversely affect product performance

For example, a transistor is used in a display device to control the writing and holding of display data in each pixel. The leakage current of the transistor in the off state will make the pixel unable to maintain the display state for a long time, so that the display device must refresh the screen at a certain frequency or more. Make display products have high power consumption when displaying static images

Moreover, the existence of the off-state leakage current will also deteriorate the ability of the pixel to maintain the display state in each display frame, resulting in a decrease in the display quality of the picture

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