Etching fluid for silver nanowire conducting film and application method thereof

A silver nanowire and conductive film technology, which is applied in the field of etching solution, can solve the problems of high preparation temperature and high price, and achieve the effects of high light transmittance, low cost and low environmental pollution

Inactive Publication Date: 2018-05-18
TIANJIN BAOXINGWEI TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the material has disadvantages such as brittleness, high preparation temperature, and high price.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Embodiment 1 An etching solution for a silver nanowire conductive film, characterized in that the etching solution components and mass percentages are as follows:

[0022] Acetic acid: 30%;

[0023] Ammonia: 10%;

[0024] Ferric acetate: 20%;

[0025] Hydrogen peroxide: 16%;

[0026] Modified cellulose: 3%;

[0027] Silica: 4%;

[0028] Carboxymethylcellulose: 3%;

[0029] Ethylene glycol: 2%;

[0030] Deionized water: 12%.

[0031] A method of using an etching solution for the above-mentioned silver nanowire conductive film, characterized in that the silver nanowire conductive film is immersed in the above-mentioned etching solution, placed at room temperature for 15 minutes, and then the silver nanowire conductive film is cleaned with pure water, The silver nanowire conductive film is air-dried or dried.

Embodiment 2

[0032] Embodiment 2 An etching solution for a silver nanowire conductive film, characterized in that the etching solution components and mass percentages are as follows:

[0033] Acetic acid: 10%;

[0034] Ammonia: 5%;

[0035] Ferric acetate: 10%;

[0036] Hydrogen peroxide: 6%;

[0037] Modified cellulose: 15%;

[0038] Silica: 4%;

[0039] Carboxymethylcellulose: 3%;

[0040] Ethylene glycol: 17%;

[0041] Deionized water: 30%.

[0042] A method for using the etching solution for the above-mentioned silver nanowire conductive film, characterized in that, the silver nanowire conductive film is immersed in the above-mentioned etching solution, placed at room temperature for 10 minutes, and then the silver nanowire conductive film is cleaned with pure water, The silver nanowire conductive film is air-dried or dried.

Embodiment 3

[0043] Embodiment 3 An etching solution for a silver nanowire conductive film, characterized in that the etching solution components and mass percentages are as follows:

[0044] Acetic acid: 20%;

[0045] Ammonia: 8%;

[0046] Ferric acetate: 10%;

[0047] Hydrogen peroxide: 8%;

[0048] Modified cellulose: 12%;

[0049] Silica: 4%;

[0050] Carboxymethylcellulose: 3%;

[0051] Ethylene glycol: 5%;

[0052] Deionized water: 30%.

[0053] A method of using the etching solution for the above-mentioned silver nanowire conductive film, characterized in that, the silver nanowire conductive film is immersed in the above-mentioned etching solution, placed at room temperature for 5 minutes, and then the silver nanowire conductive film is cleaned with pure water, The silver nanowire conductive film is air-dried or dried.

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Abstract

The invention provides etching fluid for a silver nanowire conducting film and an application method thereof. The etching fluid comprises, by mass percent, 10-30% of acetic acid, 5-10% of ammonia water, 10-20% of inorganic metallic salt, 6-16% of hydrogen peroxide, 3-15% of water-soluble polymer, 4% of silicon dioxide, 3% of carboxymethyl cellulose, 2-17% of ethylene glycol and 10-30% of deionizedwater. The silver nanowire conducting film prepared through the etching fluid has the characteristics of being stable in film surface conductivity, low in resistivity, high in light transmittance andstrong in adhesive force. The etching fluid is simple and mature in preparation technological process, simple in equipment, convenient to operate, low in cost and convenient to apply and popularize.Besides, the silver nanowire conducting film prepared through the etching fluid has the characteristics of being good in chemical stability and excellent anti-corrosive performance, does not contain strong acid or strong base, causes little environmental pollution, can be applied to the fields such as electromagnetic shielding and electronic circuits and has extensive application value.

Description

technical field [0001] The invention relates to the technical field of an etching solution, in particular to an etching solution for a silver nanowire conductive film and a method for using the same. Background technique [0002] At present, the industrial production of transparent conductive films is dominated by oxides. Oxide transparent conductive films are widely used as transparent electrodes in flat-panel displays, solar cells, touch screens, heatable Glass windows are medium. ITO (Indium Tin Oxide) is currently the most widely used transparent material. ITO is an N-type oxide semiconductor - indium tin oxide. The two most critical indicators for evaluating the quality of ITO films are light transmittance and conductivity. In the material conductive film, Sn-doped In 2 O 3 (ITO) has the highest transmittance and the best conductivity, the light transmittance is more than 90%, and the conductivity reaches 10-100ohm / sq while the light transmittance is 90%. However, t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/30
CPCC23F1/30
Inventor 司荣美潘中海刘彩风
Owner TIANJIN BAOXINGWEI TECH
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