Sulfur resistant catalyst for low temperature catalytic combustion of VOCs and preparation method thereof
A low-temperature catalysis and catalyst technology, which is applied in the direction of combustion methods, physical/chemical process catalysts, chemical instruments and methods, etc., can solve problems restricting large-scale production and application, and achieve good VOCs catalytic decomposition ability, good catalytic stability, good Effect of sulfur resistance characteristics
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0021] The preparation method of the present embodiment comprises the following steps:
[0022] A. Weigh a certain amount of CeZr powder and add ethanol and ammonia water, stir to obtain mixed solution A;
[0023] B, under vigorous stirring condition, drop mixed solution B in above-mentioned mixed solution, obtain mixed solution C; Described mixed solution B is the ethanol solution containing Si source, Ti source; The atomic ratio of CeZr, Si, Ti is 60 :3:2;
[0024] C. The mixture C was stirred for 1 hour, then heated to 80°C and aged for 2 hours to obtain the wrapped CeZr@SiTi slurry. After suction filtration, the filter cake was directly dried at 110°C, and then ground into powder to obtain powder CeZr @SiTi;
[0025] D. Add the obtained CeZr@SiTi powder and a certain amount of noble metal salt into ethylene glycol, stir for 1 hour, adjust the pH value to 13, then raise the temperature to 145°C and stir for 5 hours, cool to room temperature, and then adjust the solution w...
Embodiment 2
[0030] The preparation method of the present embodiment comprises the following steps:
[0031] A. Weigh a certain amount of CeZr powder and add ethanol and ammonia water, stir to obtain mixed solution A;
[0032] B, under vigorous stirring condition, drop mixed solution B in above-mentioned mixed solution, obtain mixed solution C; Described mixed solution B is the ethanol solution that contains Si source, Ti source; The atomic ratio of CeZr, Si, Ti is 95 :25:15;
[0033] C. The mixture C was stirred for 1 hour, then heated to 80°C and aged for 2 hours to obtain the wrapped CeZr@SiTi slurry. After suction filtration, the filter cake was directly dried at 110°C, and then ground into powder to obtain powder CeZr @SiTi;
[0034] D. Add the obtained CeZr@SiTi powder and a certain amount of noble metal salt into ethylene glycol, stir for 1 hour, adjust the pH value to 13, then raise the temperature to 145°C and stir for 5 hours, cool to room temperature, and then adjust the solut...
Embodiment 3
[0039] The preparation method of the present embodiment comprises the following steps:
[0040] A. Weigh a certain amount of CeZr powder and add ethanol and ammonia water, stir to obtain mixed solution A;
[0041] B, under vigorous stirring condition, drop mixed solution B in above-mentioned mixed solution, obtain mixed solution C; Described mixed solution B is the ethanol solution containing Si source, Ti source; The atomic ratio of CeZr, Si, Ti is 70 :14:9;
[0042] C. The mixture C was stirred for 1 hour, then heated to 80°C and aged for 2 hours to obtain the wrapped CeZr@SiTi slurry. After suction filtration, the filter cake was directly dried at 110°C, and then ground into powder to obtain powder CeZr @SiTi;
[0043] D. Add the obtained CeZr@SiTi powder and a certain amount of noble metal salt into ethylene glycol, stir for 1 hour, adjust the pH value to 13, then raise the temperature to 145°C and stir for 5 hours, cool to room temperature, and then adjust the solution ...
PUM
Property | Measurement | Unit |
---|---|---|
particle diameter | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com