Wafer edge defect detecting method

Abstract

The invention belongs to the technical field of semiconductor manufacturing and discloses a wafer edge defect detecting method. The method includes steps: establishing a measurement model which comprises a plurality of measurement points corresponding to the edge of a to-be-detected wafer, wherein each measurement point has a corresponding angle value; measuring a value of distance between each measurement point and the center of the to-be-detected wafer; comparing each distance value with a preset standard numerical value, judging that the measurement points corresponding to the values of distance smaller than the standard numerical value are abnormal points, and acquiring the angle values of the abnormal points; according to the corresponding angle values, acquiring specific defect morphologies of the abnormal points to display. The method has advantages that by defining a plurality of measurement points, in one-to-one correspondence to the angle values, at the edge of the wafer, thevalue of distance between each measurement point and the center of the wafer is measured and compared with the standard numerical value to obtain defect positions, then the defect positions are detected to obtain specific morphologies of the defects, and accordingly detection speed and accuracy rate are increased.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to a method for detecting wafer edge defects. Background technique [0002] An integrated circuit (integrated circuit) is a tiny electronic device or component. After oxidation, photolithography, diffusion, epitaxy, aluminum evaporation and other semiconductor manufacturing processes, the semiconductors, resistors, capacitors and other components required to form a circuit with certain functions and the connecting wires between them are all integrated on a small silicon chip. , and then solder the electronics packaged in a package. During the manufacture of integrated circuits, there is a possibility of defects forming on the wafer during each process flow. With the development of semiconductor technology, semiconductor devices tend to be miniaturized more and more, and the influence of defects on the wafer is increasing in the semiconductor process. There...

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Problems solved by technology

[0004] According to the above-mentioned problems existing in the prior art, a method for detecting wafer edge defects is now provided, aiming to solve the problems of slow detection speed and low accuracy in the prior art by manually using a microscope to detect wafers

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