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Novel magnetic fluid-piezoelectric film structure device and production method thereof

A technology of piezoelectric film and manufacturing method, applied in the field of new magnetic fluid-piezoelectric film structure device and its manufacturing, to achieve the effects of avoiding difficult maintenance, good working stability and strong anti-interference ability

Inactive Publication Date: 2018-05-04
NINGBO DAHONGYING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the current information communication methods of magnetic fluid structural devices are all wired or active transmission, which limits the development of magnetic fluid structural devices in the direction of wireless and passive

Method used

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  • Novel magnetic fluid-piezoelectric film structure device and production method thereof
  • Novel magnetic fluid-piezoelectric film structure device and production method thereof
  • Novel magnetic fluid-piezoelectric film structure device and production method thereof

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Experimental program
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Effect test

specific Embodiment approach 1

[0053] 1. Select silicon wafer as the substrate layer, and clean and dry the silicon wafer for later use;

[0054] 2. Using low-pressure chemical vapor deposition to grow a layer of low-stress SiO with a thickness of 2 µm on the surface of the silicon wafer 2 Film, as the support layer of the piezoelectric film layer;

[0055] 3. The bulk silicon etching process is used to remove most of the silicon on the back of the silicon substrate layer to release the piezoelectric sandwich structure;

[0056] 4. Deposit metal Al with a thickness of 2nm as the lower electrode layer and pattern it;

[0057] 5. Using the magnetron sputtering method, deposit a 3μm ZnO piezoelectric film layer with a preferred orientation parallel to the c axis, and pattern the leads of the lower electrode layer to be exposed;

[0058] 6. Deposit metal Al with a thickness of 2nm as the upper electrode layer and pattern it, and lead the upper electrode layer to the plane of the lower electrode layer to connect to the ex...

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Abstract

The invention discloses a novel magnetic fluid-piezoelectric film structure device and a production method thereof. The device comprises a piezoelectric sandwich structure and a magnetic fluid layer,wherein the piezoelectric sandwich structure comprises a piezoelectric film layer as well as a top electrode layer and a bottom electrode layer which are arranged on the upper and lower surfaces of the piezoelectric film layer, and a lead (not shown) is arranged between the top electrode layer and the bottom electrode layer; the magnetic fluid layer is located on the top electrode layer. The device is high in magnetic field sensor sensitivity, good in working stability, high in antijamming capability, wireless and passive, and the problem that a probe fails in a long-term working state and isdifficult to repair is solved.

Description

Technical field [0001] The invention belongs to the field of microelectronic mechanical systems (MEMS), and particularly relates to a new type of magnetic fluid-piezoelectric film structure device and a manufacturing method thereof. Background technique [0002] With the rapid development of modern wireless communication technology, higher requirements are put forward for communication devices working in the radio frequency band: miniaturization, integration, low power consumption, low cost, and high performance. Piezoelectric film bulk acoustic resonator FBAR (Film-bulk-acoustic-resonator) based on MEMS technology has developed rapidly in the past 20 years. At the same time, it also successfully promoted the development of another application field of FBAR resonators-sensor devices. For sensor applications, an external chemical or physical sensitive film is usually coated on the top of the resonator to form a layered piezoelectric film sensing device that can measure the mass o...

Claims

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Application Information

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IPC IPC(8): G01R33/00B81B7/00B81C1/00
CPCB81B7/0009B81C1/00047G01R33/0052
Inventor 刘敬李向阳
Owner NINGBO DAHONGYING UNIV
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