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A wavelength-tunable electroluminescent device

A technology of electroluminescent devices and light-emitting devices, which is applied in the direction of electric solid-state devices, electrical components, semiconductor devices, etc., can solve the problem that the emission wavelength can no longer be changed, and achieve the effect of high color rendering index, simple process and few processes

Inactive Publication Date: 2020-11-06
CHINA JILIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But once the device structure is fixed, the output wavelength cannot be changed for a single device

Method used

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  • A wavelength-tunable electroluminescent device
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  • A wavelength-tunable electroluminescent device

Examples

Experimental program
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Embodiment 1

[0048] Such as figure 2 As shown, a wavelength-modulatable electroluminescent device of the present invention is composed of two units A1 and A2. A1 is a voltage modulation unit composed of a metal electrode M1, a semiconductor material S1, a dielectric material I1, and a metal electrode M2. M1 and M2 are continuous electrode film materials. M1 is an Au film with a thickness of 40nm; the semiconductor material S1 is a TiN film with a thickness of 10nm; the I1 layer is SiO 2 thin film with a thickness of 8nm; the M2 layer is an Au thin film with a thickness of 10nm. A2 is a top-emitting organic electroluminescent device, the bottom electrode is the common electrode M2 ​​of the voltage modulation unit, O1 is the electrode modification layer, which is composed of 2nm Ag2O, and O2 is the hole injection layer, which is composed of 22.5nm m-MTDATA; O3 is the electron blocking layer, which is composed of 5nm NPB film; O4 is the light emitting layer, which is composed of 15nm DPVBi...

Embodiment 2

[0052] Such as image 3 As shown, a wavelength-modulatable electroluminescent device of the present invention is composed of two units A1 and A2, A1 is a voltage modulation unit, which is composed of a grid-shaped metal electrode M1, a semiconductor material S1, a dielectric material I1, and a metal electrode M2. . M2 is a continuous electrode film material. The gate electrode M1 is an Au electrode with a thickness of 40nm and a width of 500nm, and each Au gate electrode is separated by 1um, and voltage can be applied independently. The semiconductor material S1 is a TiN film with a thickness of 10nm; the I1 layer is SiO 2 thin film with a thickness of 8nm; the M2 layer is an Au thin film with a thickness of 10nm. A2 is a top-emitting organic electroluminescent device, the bottom electrode is the common electrode M2 ​​of the voltage modulation unit, O1 is the electrode modification layer, which is composed of 2nm Ag2O, and O2 is the hole injection layer, which is composed o...

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Abstract

An electroluminescent device whose wavelength can be modulated is characterized in that it includes a voltage modulation unit A1 composed of M1, I1, S1, and M2 and an electroluminescent device A2. The terminal voltage realizes the adjustment of the emission wavelength of the electroluminescent device A2. The present invention adjusts the reflection phase shift of the unit by adjusting the voltage across the voltage modulation unit A1, and the change of the reflection phase shift leads to the change of the emission wavelength of the electroluminescent device A2, thereby realizing the modulation of the emission wavelength of the light emitting device. The invention only needs to adjust the voltage at both ends of the modulator layer to realize the modulation of the emission spectrum of the light-emitting device, and achieve the purpose of modulating the emission wavelength of the light-emitting device under a fixed structure, and the structure is simple and the modulation speed is fast, which is beneficial to the integration of display devices and high speed optical modulator applications.

Description

technical field [0001] The invention belongs to the field of electroluminescence, and in particular relates to an organic electroluminescence device and an LED device with a microcavity effect. [0002] technical background [0003] Organic electroluminescent display (OLED) technology is recognized in the industry as the most likely to replace the new generation of liquid crystal display technology, and traditional cathode ray display (CRT), liquid crystal display (LCD), plasma display (PDP) and inorganic semiconductor ( Compared with LED) display, it has many advantages: (1) The process is relatively simple, less raw materials are used, and the cost is lower, and large-area, flexible displays can be prepared by inkjet printing and other methods; (2) It has low-voltage drive (less than 10V) and With low power consumption and light weight, it is easy to be applied to portable display terminals; organic electroluminescent devices have attracted more and more attention from acad...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/52H01L51/56
CPCH10K50/00H10K50/85H10K50/86H10K71/00
Inventor 孟彦龙王玲莉金国君
Owner CHINA JILIANG UNIV
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