Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Double flexible pair-based three-degree-of-freedom precision adjustment parallel mechanism

A precise adjustment, dual-flexibility technology, applied in optomechanical equipment, photo-engraving process of pattern surface, optics, etc., can solve problems such as installation space limitation, and achieve the effect of ensuring reliability, reducing input current and reducing heat generation

Active Publication Date: 2018-04-20
ZHEJIANG CHEER TECH CO LTD
View PDF4 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At the same time, complex optical systems and corresponding supporting mechanisms must be combined in a limited space, so there are strict installation space restrictions for each component

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Double flexible pair-based three-degree-of-freedom precision adjustment parallel mechanism
  • Double flexible pair-based three-degree-of-freedom precision adjustment parallel mechanism
  • Double flexible pair-based three-degree-of-freedom precision adjustment parallel mechanism

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027]The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0028] Such as figure 1 As shown, a three-degree-of-freedom precision adjustment parallel mechanism S2 based on double flexible pairs is installed between the main frame 1 of the immersion lithography machine and the immersion unit S3, and the optical system S1 of the immersion lithography machine runs through the main body of the immersion lithography machine. The frame 1, the three-degree-of-freedom precision adjustment parallel mechanism S2 based on the double flexible pair, and the immersion unit S3 expose the silicon wafer 3 at the bottom through the immersion flow field 2 . The main frame 1 of the immersion lithography machine and the immersion unit S3 pass through such as figure 2 The three groups of kinematic branch chains with the same structure are connected in parallel. The three groups of kinematic branch chains are unevenly distributed aro...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a double flexible pair-based three-degree-of-freedom precision adjustment parallel mechanism, comprising three groups of motion branch chains which are connected in parallel and have the same structure, wherein the three groups of motion branch chains are in uneven circumference distribution at three extending ends of an immersion unit by taking a center hole of the immersion unit as a center; each group of motion branch chain comprises a linear motion assembly, a double flexible pair connecting rod assembly, a mechanical anti-collision assembly, a Z-direction displacement measuring assembly and a gravity compensation assembly. The double flexible pair-based three-degree-of-freedom precision adjustment parallel mechanism is used for realizing installation, fixationand space position adjustment of the immersion unit of an immersion type photoetching machine and realizing micron-level positioning of the immersion unit; double flexible pairs are adopted, the structure is simple and compact, and the advantages of no friction and no need of lubrication are achieved; the wholly mechanism adopts a parallel mechanism, the rigidity is high, the response is quick, the adjustment range is large, modular design and assembly are adopted, and the mechanism can be used for three-degree-of-freedom precision adjustment in other occasions except the immersion type photoetching machine.

Description

technical field [0001] The invention relates to a three-degree-of-freedom precision-adjustment parallel mechanism, in particular to a three-degree-of-freedom precision-adjust parallel mechanism based on double flexible pairs. Background technique [0002] Immersion lithography machine is the core equipment of VLSI manufacturing. Different from the traditional lithography machine, the immersion lithography machine adds a layer of liquid between the projection objective lens and the silicon wafer, called the immersion flow field. This increases the refractive index, resulting in higher resolution. Immersion lithography is the only practical technology used in the current IC production line below 45nm. [0003] The immersion flow field is generated by the immersion unit, and in order to prevent the leakage of the immersion flow field, the gap between the immersion unit and the silicon wafer is required to be within 1 mm, and there is a strict parallelism requirement for the g...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
CPCG03F7/20G03F7/2041
Inventor 付新朱春徐宁
Owner ZHEJIANG CHEER TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com