An ion implantation device and its control method

Abstract

Embodiments of the invention provide ion injection equipment and a control method thereof, relate to the technical field of display, and can reduce the quantity of impurity particles entering an ion injection chamber generated by inner and outer wall collision of ion beams and an analysis magnetic field in a stage of adjusting the magnetic field strength of the analysis magnetic field. The ion injection equipment comprises an ion source, a beam line apparatus, an ion injection chamber, and a monitoring apparatus positioned in the ion injection chamber; the monitoring apparatus is used for monitoring the current of the ion beams entering the ion injection chamber through the beam line apparatus in the stage of adjusting the magnetic field strength of the analysis magnetic field of the beamline apparatus; the ion injection equipment also comprises an adjustment part for adjusting the opening degree of an ion beam inlet; the adjustment part is arranged in the position of the ion beam inlet of the ion injection chamber; and the adjustment part is used for sheltering the part of the ion beam inlet of the ion injection chamber in the stage of adjusting the magnetic field strength of theanalysis magnetic field of the beam line apparatus.

Description

technical field [0001] The invention relates to the field of display technology, in particular to an ion implantation device and a control method thereof. Background technique [0002] The ion implantation equipment (Ion Doping System) will automatically extract the ion beam (Ion Beam) before ion implantation. In the process of ion beam automatic extraction, it is necessary to adjust the magnetic field strength of the beamline device's analytical magnetic field (Beam Line) to determine the optimal magnetic field strength of the analytical magnetic field. This process is also called the Mass Search process. Specifically, the magnetic field strength of the analytical magnetic field is continuously changed, and by such as Figure 1a The shown monitoring device 301 monitors the current (Beam Current) of the ion beam to determine the optimum magnetic field strength. Under the action of the analysis magnetic field 201 with the optimum magnetic field strength, the ion beam can ent...

AI Technical Summary

Problems solved by technology

Judging from the current monitoring data, as long as the ion implantation equipment performs the Mass Search process, there is a problem that the first sheet of impurity particles P on the substrate to be implanted is relatively high. With the progress of the ion implantation process, the remaining impurity particles P on the substrate to be implanted The number of

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