Method for preparing phthalocyanine monocrystal thin film on copper film modified graphene substrate
A technology of single crystal thin film and graphene, which is applied in the field of graphene, can solve the problems of unfavorable carrier transport and achieve high conductivity, flexibility, and shear resistance.
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[0024] Embodiment: a kind of method for preparing phthalocyanine single crystal thin film on copper film modified graphene substrate, as shown in Figure 1- Figure 5 As shown, the method is:
[0025] In step (1), the graphene on the copper-based graphene is transferred to the SiO2 / Si substrate by polymethyl methacrylate assisted chemical etching.
[0026] Step (2), place the SiO2 / Si substrate in a vacuum heating device for high-temperature annealing, heat the SiO2 / Si substrate to 500°C, and keep it at 500°C for 1 hour to remove the polyformaldehyde remaining on the SiO2 / Si substrate methyl acrylate, and then the SiO2 / Si substrate was naturally cooled to room temperature under vacuum to obtain a clean graphene substrate.
[0027] Step (3), the graphene substrate is loaded into the vacuum chamber, and the air pressure of the vacuum chamber is less than 1×10 -5 Pa, at the same time, put the copper wire or copper particles with a copper content greater than or equal to 99.99% in...
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