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Wheatstone-bridge-based pressure sensor and manufacturing method thereof

A technology of a pressure sensor and a manufacturing method, which is applied in the manufacture/assembly of piezoelectric/electrostrictive devices, components of piezoelectric devices or electrostrictive devices, piezoelectric/electrostrictive/magnetostrictive devices, etc. , can solve the problems of high Si diffusion resistance process requirements, difficult to guarantee process accuracy, uniformity, poor temperature characteristics of Si materials, etc., to achieve the effect of improving product manufacturing accuracy, simple preparation method and ensuring stability

Active Publication Date: 2018-02-23
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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Problems solved by technology

However, the temperature characteristics of Si material are poor, and the characteristics of the resistance formed by the diffusion process will change at higher temperatures, and the isolation degree of the PN junction used to isolate the resistance and the substrate will also decline.
Usually Si-based pressure sensors can only work in environments below 120°C
In addition, to obtain four Si diffusion resistors with the same resistance value is also very demanding on the process, and it is difficult to guarantee the process accuracy and uniformity.

Method used

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  • Wheatstone-bridge-based pressure sensor and manufacturing method thereof
  • Wheatstone-bridge-based pressure sensor and manufacturing method thereof
  • Wheatstone-bridge-based pressure sensor and manufacturing method thereof

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Embodiment Construction

[0029] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0030] Such as figure 2 As shown, it is an embodiment of a pressure sensor based on a Wheatstone bridge structure and its manufacturing method in the present invention, including bonding wafers, bonding media, substrates, buffer layers, metal wires, barrier layers, The cavity and the ohmic electrode, the material of the buffer layer is gallium nitride, and the material of the barrier layer is In x al y Ga 1-x-y N multi-component compound, according to which the bridge resistance is obtained.

[0031] figure 1 Including metal wire 9 , cavity film 2 and GAN device 1 .

[0032] Gallium nitride is used as the buffer layer, and the GaN bandgap width is 3.4eV, which is three times that of Si material. The wide bandgap determines the good high-temperature characteristics of the material. Reports have confirmed that GaN material devices...

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Abstract

The invention discloses a Wheatstone-bridge-based pressure sensor and a manufacturing method thereof, which relate to the technical field of semiconductor pressure sensors. The pressure sensor comprises a bonding wafer, a bonding medium, a substrate, a buffer layer, a barrier layer, metal lead wires, a barrier layer, an empty cavity and ohmic electrodes, wherein the material of the buffer layer isgallium nitride, and the material of the barrier layers is In<x>Al<y>Ga<1 x y>N. The pressure sensor ensures the stability of resistance, is simple in manufacturing method, improves the manufacturingprecision of products, and can be used in a high-temperature environment.

Description

technical field [0001] The invention relates to the technical field of semiconductor pressure sensors. Background technique [0002] A pressure sensor is a transducer that converts pressure signals into electrical signals that can be intuitively obtained, and is widely used in all aspects of life. At present, semiconductor pressure sensors are mainly based on Si material, using a silicon cup-type thin film structure. The Si material has poor temperature characteristics, and the characteristics of the resistance formed by the diffusion process will change at higher temperatures, and the isolation degree of the PN junction used to isolate the resistance and the substrate will also decline. Usually Si-based pressure sensors can only work in environments below 120°C. In addition, to obtain four Si diffusion resistors with the same resistance value also has high process requirements, and it is difficult to guarantee the process accuracy and uniformity. Contents of the inventi...

Claims

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Application Information

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IPC IPC(8): H01L41/04H01L41/113H01L41/16H01L41/22
CPCH10N30/80H10N30/85H10N30/302H10N30/01
Inventor 谭鑫冯志红吕元杰王元刚宋旭波周幸叶房玉龙顾国栋
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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