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Manufacturing method of aluminum gasket

A manufacturing method and liner technology, applied in the field of aluminum liner manufacturing, can solve the problems of reducing the surface fluoride ion concentration and the like

Inactive Publication Date: 2018-02-16
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0005] Under the condition that the plastic placement environment and the water vapor environment of the foundry or test factory cannot be changed or improved, in the existing technology, a large amount of deionized water is used to clean the wafer, but this method can only reduce the surface fluoride ion concentration, it is difficult to completely remove fluoride ions, and repeated washing also consumes a lot of water resources

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  • Manufacturing method of aluminum gasket
  • Manufacturing method of aluminum gasket

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Embodiment Construction

[0032] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0033] It should be noted that, in the case of no conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other.

[0034] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.

[0035] In a preferred embodiment of the present invention, according to figure 1 Shown, a kind of...

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Abstract

The invention discloses a manufacturing method of an aluminum gasket, applied to the manufacturing field of a semiconductor. The manufacturing method comprises the following steps of obtaining the aluminum gasket which is formed by an aluminum thin film by adopting a physical vapor deposition method; after performing etching and cleaning, carrying out sputtering on the aluminum gasket by plasma inan inert gas; and adopting oxygen as the gas source, performing annealing treatment for the second time. By adoption of the technical scheme provided by the invention, the residual fluorine concentration on the surface of the aluminum gasket in the etching process of the aluminum gasket can be greatly lowered, and generation of crystal defects on the surface of the aluminum gasket can be suppressed effectively.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing an aluminum pad Background technique [0002] The aluminum pad is the connection interface between the semiconductor wafer and the outside world, and the semiconductor wafer can form a metal connection with the outside world through the aluminum pad. In the manufacturing process of the aluminum liner, it is usually necessary to perform dry etching on the covering layer on the surface of the aluminum liner. In this dry etching process, since fluorine-containing polymers are used, fluorine-containing residues will be generated. [0003] In the subsequent process, the semiconductor wafer needs to be placed on the plastic material. With natural degradation, the residual fluorine ions on the surface of the wafer will be gradually released. As the use time increases, more and more negative ions will be released. The environment of the foundry or te...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/60
CPCH01L24/01H01L21/02697
Inventor 吴佳宏周惟舜张志刚
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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