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Semiconductor device, manufacturing method thereof, and electronic device

A manufacturing method and semiconductor technology, applied in the direction of semiconductor devices, electric solid state devices, circuits, etc., can solve the problems affecting the final performance of the device, and achieve the effect of good device performance, device profile, good yield and performance

Active Publication Date: 2020-11-17
SEMICON MFG INT (BEIJING) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] As the critical dimension of the NAND flash memory storage unit shrinks to below 38m, the width and height of the wordline (wordline) of the storage unit become narrower and higher respectively, and the device dense area (for example, word line area) and sparse area (for example, select gate The etching loading effect (etch loading) between the area between the selection gate and the selection gate is becoming more and more obvious, which makes the sparse area prone to weak points (weak point), for example, the sparse area near the selection gate is due to the etch loading effect Form etch pits, which are relatively fragile, which will affect the final performance of the device
Additionally, due to etch loading effects, the floating gate profile

Method used

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  • Semiconductor device, manufacturing method thereof, and electronic device
  • Semiconductor device, manufacturing method thereof, and electronic device
  • Semiconductor device, manufacturing method thereof, and electronic device

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Embodiment 1

[0040] The following will refer to Figure 4A ~ Figure 4E A method for fabricating a semiconductor device according to an embodiment of the present invention will be described in detail.

[0041] First, if Figure 4A As shown, a semiconductor substrate 400 is provided, the semiconductor substrate 400 includes a dense region and a sparse region, and a gate stack is formed on the semiconductor substrate 400, and the gate stack includes a tunnel oxide layer 401, Floating gate 402, gate dielectric layer 403, control gate 404, and control gate hard mask layer 405, on which a hard mask layer 406, an etching stop layer 407, and a word line pattern layer 408 are sequentially formed , a first filling layer 409 , a first anti-reflection layer 410 and a patterned first photoresist layer 411 .

[0042] Wherein, the semiconductor substrate 400 can be at least one of the materials mentioned below: Si, Ge, SiGe, SiC, SiGeC, InAs, GaAs, InP or other III / V compound semiconductors, and also i...

Embodiment 2

[0070] The present invention also provides a semiconductor device fabricated by the above method, such as Figure 5 As shown, the semiconductor device includes: a semiconductor substrate 500, on which a word line WL and a selection gate SG are formed, and the word line WL and the selection gate SG include a tunnel oxide layer 501, a floating gate 502, The stacked structure of the gate dielectric layer 503 , the control gate 504 and the control gate hard mask layer 505 .

[0071] Wherein, the semiconductor substrate 500 can be at least one of the materials mentioned below: Si, Ge, SiGe, SiC, SiGeC, InAs, GaAs, InP or other III / V compound semiconductors, and also includes multiple semiconductors composed of these semiconductors. The layer structure or the like may be silicon-on-insulator (SOI), silicon-on-insulator (SSOI), silicon-germanium-on-insulator (S-SiGeOI), silicon-germanium-on-insulator (SiGeOI), and germanium-on-insulator (GeOI). Devices, such as NMOS and / or PMOS, can...

Embodiment 3

[0075] Still another embodiment of the present invention provides an electronic device, including a semiconductor device and an electronic component connected to the semiconductor device. Wherein, the semiconductor device includes: a semi-semiconductor substrate, on which a word line and a selection gate are formed, and the word line and the selection gate include a tunnel oxide layer, a floating gate, a gate dielectric layer, a control Gate and control gate hard mask layer stack structure.

[0076] The semiconductor substrate can be at least one of the materials mentioned below: Si, Ge, SiGe, SiC, SiGeC, InAs, GaAs, InP or other III / V compound semiconductors, including multilayer structures composed of these semiconductors etc. or silicon-on-insulator (SOI), silicon-on-insulator (SSOI), silicon-germanium-on-insulator (S-SiGeOI), silicon-germanium-on-insulator (SiGeOI), and germanium-on-insulator (GeOI). Devices, such as NMOS and / or PMOS, can be formed on the semiconductor su...

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Abstract

The present invention provides a semiconductor device, a manufacturing method thereof, and an electronic device. The manufacturing method includes: providing a semiconductor substrate, the semiconductor substrate includes a dense area and a sparse area, and a gate stack is formed on the semiconductor substrate. , the gate stack includes a floating gate, a gate dielectric layer, a control gate and a control gate hard mask layer; patterning the gate stack in the dense area of ​​the semiconductor substrate to form a pattern located in the dense area word lines in the region; patterning the gate stack in the sparse region of the semiconductor substrate to form a selection gate located in the sparse region. This fabrication method can achieve better device performance and device profile. The semiconductor device and electronic device have improved performance and yield due to the above-mentioned manufacturing method.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a semiconductor device, a manufacturing method thereof, and an electronic device. Background technique [0002] With the development of semiconductor manufacturing technology, flash memory (flash memory) with faster access speed has been developed in terms of storage devices. Flash memory has the characteristics that information can be stored, read, and erased multiple times, and the stored information will not disappear after power failure. Therefore, flash memory has become a popular choice for personal computers and electronic devices. A widely used type of non-volatile memory. However, NAND (NAND gate) fast memory is widely used in fields with high read / write requirements due to its large storage capacity and relatively high performance. Recently, the capacity of NAND flash memory chips has reached 2GB, and the size is rapidly increasing. Solid state drives ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11517H10B41/00
Inventor 陈卓凡张翼英
Owner SEMICON MFG INT (BEIJING) CORP
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