Manufacture method of target material assembly

Abstract

The invention provides a manufacture method of a target material assembly. The method comprises the following steps: providing a copper target blank and a back board, wherein a to-be-welded surface ofthe copper target blank is a first welding surface and a to-be-welded surface of the back board is a second welding surface; coating the first welding surface with a first solder layer, the materialof which is used recovery material; coating the first solder layer with a second solder layer, the material of which is not used, wherein the second solder layer and the first solder layer are the same in material; enabling the first welding surface coated with the first solder layer and the second welding surface coated with the second solder layer to be oppositely arranged and attached with eachother, welding the target blank to the back board by welding technology in order to form the target material assembly. The material of the first solder layer is used recovery material while the material of the second solder layer is not used. Compared with a scheme adopting only one solder layer, welding bonding efficiency of the target blank and the back board can be increased after mutual fusion between the first solder layer and the second solder layer.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a manufacturing method of a target component. Background technique [0002] Sputtering technology is one of the commonly used processes in the field of semiconductor manufacturing. With the increasing development of sputtering technology, sputtering targets play an increasingly important role in sputtering technology. The quality of sputtering targets directly affects the sputtering technology. Film quality after injection. [0003] In the field of sputtering target manufacturing, the target assembly is composed of a target blank that meets the sputtering performance and a back plate that is combined with the target blank by welding. During the sputtering process, the working environment of the target assembly is relatively harsh. For example: one side of the back plate of the target assembly is forcibly cooled by a certain pressure of cooling water, while one side of...

AI Technical Summary

Problems solved by technology

In such a harsh environment, in order to ensure the stability of the film quality and the quality of the target component, the quality of the target blank and the back plate and the welding bonding rate are increasingly demanding, otherwise it is easy to cause the target component to be heated. Deformation, cracking and other problems will occur under the conditions, which will affect the quality of film formation and even cause damage to the sputtering base

[0004] However, the welding bonding rate of the prior art target assembly needs to be improved

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