Preparation method of polycrystalline SnSe thermoelectric material

A thermoelectric material and raw material technology, applied in the growth of polycrystalline materials, chemical instruments and methods, crystal growth, etc., can solve the problems of low utilization rate of single crystal SnSe, poor stability of ordinary polycrystalline, etc., to save energy and power costs, Guaranteed full utilization

Active Publication Date: 2017-12-29
CHONGQING UNIV
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Problems solved by technology

[0003] In summary, the problems in the prior art are: the utilization rate of single crystal SnSe is not high and the stability of ordinary polycrystalline is poor

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  • Preparation method of polycrystalline SnSe thermoelectric material
  • Preparation method of polycrystalline SnSe thermoelectric material

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Embodiment Construction

[0031] In order to make the object, technical solution and advantages of the present invention more clear, the present invention will be further described in detail below in conjunction with the examples. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0032] The development of human society is accompanied by the increase of energy consumption. Fossil fuels are decreasing day by day as non-renewable energy sources. The development of new renewable energy sources has become a hot issue in the 21st century. At the same time, with increasing interest in space exploration, advances in medical physics, and increasingly more difficult resource exploration and exploration activities on Earth, there is a need to develop a class of power systems that can supply their own energy and leave them unattended. Apps are especially suitable. Thermoelectric materials (thermoelectric mater...

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Abstract

The invention belongs to the technical field of thermoelectric materials and discloses a preparation method of a polycrystalline SnSe thermoelectric material. The preparation method comprises the following steps: high-performance monocrystal is prepared with a monocrystal preparation method; the prepared high-performance monocrystal or a residual material obtained after the high-performance monocrystal is used is ground preliminarily into fine powder with grain size smaller than 500 mu m by a tool such as a mortar, a pulverizer and the like; the fine powder is refined into ultrafine powder with grain size being 0.2-20 mu m by a ball mill; the ultrafine powder is sintered into blocks by hot-pressing equipment or plasma spark sintering equipment. The performance of the polycrystalline thermoelectric material prepared from the residual material is better than that of the traditional polycrystalline material obtained through solid-phase synthesis; meanwhile, grains with proper sizes are refined by the mortar, the pulverizer and the ball mill, and the thermoelectric performance (zT) and the stability of the polycrystalline material can be improved.

Description

technical field [0001] The invention belongs to the technical field of thermoelectric materials, and in particular relates to a preparation method of polycrystalline SnSe thermoelectric materials. Background technique [0002] The development of human society is accompanied by the increase of energy consumption. Fossil fuels are decreasing day by day as non-renewable energy sources. The development of new renewable energy sources has become a hot issue in the 21st century. Thermoelectric materials (thermoelectric materials) are functional materials that utilize the transport and interaction of carriers and phonons in solids to achieve direct mutual conversion between thermal energy and electrical energy. The traditional method of making polycrystalline thermoelectric materials is to put high-purity elements into a high-temperature furnace for melting reaction, or a long-term solid-state reaction, accompanied by subsequent long-term annealing treatment. SnSe single crystal t...

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Application Information

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IPC IPC(8): C04B35/547C04B35/645C30B28/04C30B29/46
CPCC04B35/547C04B35/645C04B2235/549C04B2235/666C30B28/04C30B29/46
Inventor 周小元彭坤岭卢旭张斌吴宏
Owner CHONGQING UNIV
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