Millimeter wave GaN power amplifier radio frequency predistortion linearizer

Abstract

The invention provides a millimeter wave GaN power amplifier radio frequency predistortion linearizer and aims at providing the predistortion linearizer which is simple in structure, low in insertion loss, wide in working frequency band and high in stability and is applicable to a millimeter wave GaN power amplifier. The millimeter wave GaN power amplifier radio frequency predistortion linearizer is realized through the following technical scheme that a radio frequency enters a broadband matching network (5) from a radio frequency input port (1) through an input chip capacitor (3) connected with an input microstrip line (2) and a two-level impedance transformation step (6) connected with an input gold wire (4). A GaN Schottky diode (8) and a tube socket circuit (9) generate a distortion radio frequency signal with expanded amplitude and expanded phase. The distortion radio frequency signal matches amplitude compression and phase compression characteristics of a millimeter wave GaN power. The distortion radio frequency signal is output to a radio frequency output port (22) through the two-level impedance transformation step (17) on the output end of the broadband matching network (5), and an output chip capacitor (20) and an output microstrip line (21) connected with an output matching gold wire (19).

Description

technical field [0001] The invention relates to a radio frequency predistortion linearizer used in millimeter-wave GaN power amplifiers, which is mainly used in the fields of satellite communication, aerospace measurement and control, 5G mobile communication, etc. Background technique [0002] In recent years, with the rapid development of modern wireless communication services, the requirements for communication system capacity are increasing, and communication spectrum resources are becoming increasingly tense. Millimeter wave technology has become a rapidly developing high-tech field. In order to solve this contradiction, on the one hand, it is necessary to study various new technologies and new measures to compress the frequency bandwidth occupied by signals; on the other hand, it is necessary to open up and enable new frequency bands. In terms of new technologies, the research and application of analog modulation technology and digital modulation technology have greatly...

AI Technical Summary

Problems solved by technology

At present, there are few research reports on RF predistortion linearizers for millimeter-wave GaN power amplifiers at home and abroad. The existing millimeter-wave power amplifier predistortion linearizers are mainly for GaAs power chips.

Since the nonlinear distortion of the millimeter-wave GaAs power chip is amplitude compression and phase expansion, which is different from the nonlinear distortion of the millimeter-wave GaN power chip, which is amplitude compression and phase compression, the existing GaAs power chip predistortion linearizer cannot be applied to GaN In the power chip, otherwise it will deteriorate the AM / PM characteristic index

[0011] To sum up, in the millimeter-wave frequency band, pre-distortion linearization technology is currently mainly used to improve the nonlinearity of the power amplifier. Since the nonlinear distortion of the millimeter-wave GaN power chip is different from that of the GaAs power chip, the existing millimeter-wave GaAs pre-distortion linearization Devices cannot meet the needs of millimeter wave GaN power amplifiers

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