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Light-emitting device and display device thereof

A technology of light-emitting devices and fluorescent materials, applied in the field of light-emitting devices and their display devices, can solve problems such as efficiency roll-off, and achieve the effects of improving efficiency roll-off, increasing paths, and easy injection of holes

Inactive Publication Date: 2017-12-19
AAC TECH NANJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In the host-guest doping system of traditional OLED devices, the efficiency roll-off is also very serious, whether it is the current fluorescent OLED or phosphorescent OLED

Method used

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  • Light-emitting device and display device thereof
  • Light-emitting device and display device thereof
  • Light-emitting device and display device thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0106] To construct the light-emitting device of the present invention, its structure is: ITO / HIL / HTL / H:A:G / ETL / EIL / cathode. Among them, the chemical structures of the host material H1, the auxiliary material A1 and the thermally delayed fluorescent material G1 (HAP-3TPA) are shown below.

[0107]

[0108]

[0109] Material property analysis:

[0110] Among the above materials, the dibenzothiophene and diaza rings in the main material H1 form an electron-withdrawing group, which is an organic material that partially transports electrons, and the carbazole and triphenylamine functional groups contained in the auxiliary material A1 form an electron-donating group , is an organic material that transports holes. The host material and the auxiliary material can thus form an exciplex during electroluminescence.

[0111] Energy level and spectral characteristic analysis:

[0112] The HOMO and LUMO energy levels of the thermally delayed fluorescent material G1 (HAP-3TPA) are ...

Embodiment 2

[0130] To construct the light-emitting device of the present invention, its structure is: ITO / HIL / HTL / H:A:G / ETL / EIL / cathode. Wherein, the chemical structure of the thermally delayed fluorescent material G2 (FDQPXZ) is as follows, and the main material H1 and the auxiliary material A1 are the same as in the first embodiment.

[0131]

[0132] Energy level and spectral characteristic analysis:

[0133] The HOMO and LUMO energy levels of the thermally delayed fluorescent material G2 (FDQPXZ) are 5.06eV and 2.91eV, the singlet state energy level and the triplet state energy level are 2.05eV and 2.01eV, respectively, ΔE ST = 0.04eV.

[0134] When FDQPXZ is used as the guest material, its UV absorption and fluorescence emission spectra are as follows Figure 7 can be shown by Figure 7 It can be seen that FDQPXZ has a strong absorption peak at 400nm-500nm, and the highest absorption peak in the visible wavelength range is around 450nm (curve 1). and, by Figure 7 The compari...

Embodiment 3

[0149] To construct the light-emitting device of the present invention, its structure is: ITO / HIL / HTL / H:A:G / ETL / EIL / cathode. Among them, the chemical structures of the host material H2 and the auxiliary material A2 are as follows, and the heat-delayed fluorescent material G1 (HAP-3TPA) is the same as that in Example 1.

[0150]

[0151] Material property analysis:

[0152] Among the above materials,

[0153] The H2 host material contains electron-withdrawing groups formed by dibenzothiophene and diazaheterocycles, which is a host material for transporting electrons, and A2 is an auxiliary material for transporting holes, which contains triphenylamine and carbazole functional groups. Electron-donating groups, which can form exciplexes during electroluminescence.

[0154] Energy level and spectral characteristic analysis:

[0155] The HOMO and LUMO energy levels of the thermally delayed fluorescent material HAP-3TPA are 5.6eV and 3.4eV, the singlet state energy level and t...

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Abstract

The invention relates to the technical field of organic light emitting, in particular to a light-emitting device. The light-emitting device comprises a first electrode, a second electrode and at least one light-emitting layer, wherein the light-emitting layer is arranged between the first electrode and the second electrode and includes at least one main body material, at least one auxiliary material and at least one heat delay fluorescent material, the at least one main body material is used for transmitting electrons, the at least one assistant material is used for transmitting holes, the at least one thermal delay fluorescent material is used for an object to emit light, and the main body material and the auxiliary material form a radical complex during the light-emitting process. By the light-emitting device, an exciton energy transfer path is increased, energy in excitons is fully utilized, and the light-emitting efficiency of the light-emitting device is improved; and meanwhile, electron injection and hole injection become easier, the starting voltage is reduced, and a phenomenon efficiency roll-off is improved.

Description

technical field [0001] The present invention relates to the field of organic light emitting technology, in particular, to a light emitting device and a display device thereof. Background technique [0002] Light-emitting device—Organic Light-Emitting Diode (OLED) emerged as a new generation of flat panel display technology and gradually entered people's field of vision. The characteristic of OLED is that it emits light by itself, unlike thin film transistor liquid crystal display (TFT-LCD), which requires backlight, so the visibility and brightness are both high, followed by low voltage demand and high power saving efficiency, plus fast response, light weight, thickness Thin, simple in structure, low in cost, etc., it is regarded as one of the most promising products in the 21st century. At present, in the application of mobile phone screens, it is the general trend that OLEDs replace Liquid Crystal Displays (LCDs). Some models of Samsung’s mobile phones have already used O...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L27/32
CPCH10K59/12H10K50/121H10K2101/30C09K11/06H10K85/636H10K85/633H10K85/6576H10K85/6572H10K50/11H10K2101/40H10K50/15H10K50/16H10K2101/20C09K2211/1018H10K71/00H10K71/164H10K85/615H10K85/626H10K85/657
Inventor 谢再锋黄达曹辰辉马腾达
Owner AAC TECH NANJING
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