Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Liquid metal computer

A liquid metal and computer technology, applied in the direction of computers, computing, digital computer components, etc., can solve the problems of high power consumption, slow computing speed, and large volume

Active Publication Date: 2017-11-07
TSINGHUA UNIV
View PDF7 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The first generation of computers used electronic tubes as data storage and processing components, but this component was large in size, consumed a lot of power, and had a slow operation speed. The subsequent second generation of computers used transistors as logic components. This three-pin The electronic device has the function of amplification, and it is convenient to control the state of the component

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Liquid metal computer
  • Liquid metal computer
  • Liquid metal computer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Reference attached figure 2 The basic logic device structure of the liquid metal computer of the present invention includes electrode lines 6, flexible film 2, liquid metal particles 7, etc., and multiple basic logic devices can form a simple element array 8 to perform complex functions.

Embodiment 2

[0044] Reference attached image 3 , by adjusting the ambient temperature to realize the control scheme of solid-liquid phase transition. The liquid metal 7 is encapsulated in the flexible film 2, and a temperature regulating device, such as a cooling plate 9, is attached on the surface of the flexible film 2. Use refrigerating plate 9 to cool down, liquid metal 7 becomes solid, reduces its contact area with electrode plate 10, thereby reduces electrical conductivity; Close refrigerating plate 9, liquid metal 7 becomes liquid at normal temperature, increases its contact area with electrode plate 10 contact area, thereby improving conductivity. In addition, the liquid metal 7 with a higher melting point is selected, and the liquid metal 7 is directly energized to melt it by using the thermal effect of the current, and then it is naturally cooled and solidified when the power is turned off, so that the effect of solid-liquid phase transition can also be achieved.

Embodiment 3

[0046] Reference attached Figure 4 , a control scheme that changes the surface oxidation degree of liquid metal particles by applying an external current, and then controls its electrical conductivity. Oxidation and deoxidation of the surface of the liquid metal particles 7 are achieved by applying currents 11 in different directions. Applying a positive current 11 causes it to lose electrons, forming an oxide film 12 on the surface, and the conductivity decreases; applying a reverse current 11 makes it gain electrons, removing the surface oxide film 12, and improving the conductivity.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Diameteraaaaaaaaaa
Login to View More

Abstract

The invention provides a liquid metal computer. The computer comprises a logic device which achieves the computer frame structure in a combined mode, and the logic device is a flexible device and mainly comprises liquid metal, flexible thin films and control components; the computer mainly uses the electroconductivity difference of the liquid metal in different physical or chemical states as the states of 0 and 1 of a logic operation, then logic units are constructed through combinations of multiple liquid metal components, and the programming calculation function of the computer is finally achieved; regulating methods of liquid metal conductive states comprise a solid-liquid phase change method, a current regulating oxide film method and a magnetic field environment controlling method. The invention further provides computer construction schemes, wherein the first scheme is that multiple liquid metal components are used for forming basic logic elements; the second scheme is that new circuit construction modes are combined with conventional electronic elements, and the liquid metal is used as connection switches of the electronic elements; the third scheme is that multiple basic elements are combined to construct an analogue computer.

Description

technical field [0001] The invention belongs to the field of liquid metal application technology, in particular to a liquid metal computer. Background technique [0002] In recent decades, computer technology has developed by leaps and bounds and is widely used in all aspects of daily life and industrial production. In the early days of the development of computer technology, the Hungarian scientist von Neumann from the United States proposed the basic structure of modern computers. Today, the computer hardware system still follows this basic structure, which consists of arithmetic units, memories, controllers, The input device and output device are composed of five major components. The data and operation commands in the computer are stored and processed in binary form, and at the same time, the data is calculated and processed through the software system, and finally the result is output through the output device. [0003] Current computers generally use semiconductor co...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G06F15/78G06F7/575B05D7/24B05D3/02B05D1/02
CPCB05D1/02B05D3/0254B05D7/24B05D7/52G06F7/575G06F15/7882
Inventor 国瑞刘静
Owner TSINGHUA UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com