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Hollow-structure nano tungsten oxide wire prepared through in-situ growth of graphene oxide

A nano-tungsten oxide, in-situ growth technology, applied in the field of nano-materials, can solve the problems of high conditions and high energy consumption, and achieve the effects of high purity, simple process and large production volume

Active Publication Date: 2017-11-07
AVIC BEIJING INST OF AERONAUTICAL MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These preparation methods have high conditions and high energy consumption, which is contrary to the development of low power consumption. Therefore, a method for preparing hollow structure nano tungsten oxide wires with controllable scale and high purity is developed, which is simple to operate, low in cost, and has high purity. more important and urgent

Method used

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  • Hollow-structure nano tungsten oxide wire prepared through in-situ growth of graphene oxide
  • Hollow-structure nano tungsten oxide wire prepared through in-situ growth of graphene oxide
  • Hollow-structure nano tungsten oxide wire prepared through in-situ growth of graphene oxide

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Embodiment 1

[0023] The invention provides a graphene oxide in-situ growth method for preparing hollow nano-tungsten oxide wires, which is characterized in that it is formed by mixing a certain amount of graphene oxide, a precursor compound containing tungsten, absolute ethanol, and deionized water.

[0024] In the above, the tungsten-containing precursor compound is a mixture of ammonium metatungstate and tungsten carbonyl, and the mass percentage of tungsten carbonyl in the mixture to ammonium metatungstate is 1-5%; so that graphene oxide and The tungsten precursor compounds have different molar ratios. ; Graphene oxide is graphene oxide prepared by a redox method, and the mass ratio of tungsten-containing precursor compound to graphene oxide is 1:1-6; graphene oxide is wetted with a certain amount of absolute ethanol, The mass percentage of graphene oxide is 0.1~0.5%; dispersed in a certain amount of deionized water, the mass percentage of deionized water in the wetting solution is 5~8%...

Embodiment 2

[0031] A certain amount of graphite powder was added to a solution consisting of concentrated H2SO4 (12mL), K2S2O8 (2.5g) and P2O5 (2.5g), and reacted at 80°C for 4.5 hours. After cooling to room temperature, 0.5 L of deionized water was added. and dry at room temperature. Add this pre-oxidized graphite powder to 150mL of concentrated H2SO4, keep the environment at 0°C with an ice-water bath, gradually add 15g KMnO4, and keep the temperature not exceeding 20°C, and stir at 35°C for 2 hours after the addition. Then 250 mL of deionized water was added and stirred for 2 hours. Then add 0.7 L of deionized water, then add 30 mL of 30% H2O2, dry at room temperature, and then dialyze in a dialysis bag for 1 week to remove heteroions. Finally, it was vacuum filtered and dried at room temperature to obtain graphene oxide.

[0032] Weigh 2g of graphene oxide, add 1000g of absolute ethanol, stir and mix evenly, add 60g of deionized water to mix, in the ultrasonic disperser, select 10m...

Embodiment 3

[0034]A certain amount of graphite powder was added to a solution consisting of concentrated H2SO4 (12mL), K2S2O8 (2.5g) and P2O5 (2.5g), and reacted at 80°C for 4.5 hours. After cooling to room temperature, 0.5 L of deionized water was added. and dry at room temperature. Add this pre-oxidized graphite powder to 150mL of concentrated H2SO4, keep the environment at 0°C with an ice-water bath, gradually add 15g KMnO4, and keep the temperature not exceeding 20°C, and stir at 35°C for 2 hours after the addition. Then 250 mL of deionized water was added and stirred for 2 hours. Then add 0.7 L of deionized water, then add 30 mL of 30% H2O2, dry at room temperature, and then dialyze in a dialysis bag for 1 week to remove heteroions. Finally, it was vacuum filtered and dried at room temperature to obtain graphene oxide.

[0035] Weigh 3g of graphene oxide, add 1000g of absolute ethanol, stir and mix evenly, add 700g of deionized water for mixing, in the ultrasonic disperser, select...

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Abstract

The invention discloses a hollow-structure nano tungsten oxide wire prepared through in-situ growth of graphene oxide. The hollow-structure nano tungsten oxide wire is prepared by mixing a certain amount of graphene oxide, a precursor compound containing tungsten, absolute ethyl alcohol and deionized water. Compared with a conventional high-pressure reaction kettle preparation method adopting a polytetrafluoroethylene lining, the hollow-structure nano tungsten oxide wire disclosed by the invention has the advantages that the energy consumption is lower, the cost is lower, industrial production investment is low, the product cost is low, and industrial batch production can be conveniently realized.

Description

technical field [0001] The invention belongs to the field of nanometer materials, and in particular relates to a hollow-structure nano-tungsten oxide wire prepared by in-situ growth of graphene oxide. Background technique [0002] Nano-tungsten oxide wire refers to the composite nanostructure of nanowires or nanorods. At present, some scholars have prepared corresponding materials through thermal evaporation, electrospinning and other processes, but these preparation methods will involve problems such as high temperature, high vacuum, and high technical difficulty. , the traditional preparation process of tungsten oxide nanowires is complicated and consumes a lot of energy, and the experimental conditions of these methods are demanding, some hydrothermal temperatures are as high as 200 ℃, and the hydrothermal time is as long as 24h or even longer. In the traditional hydrothermal method, the reaction vessels used are high-pressure reactors lined with polytetrafluoroethylene. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G41/02C01B32/198B01J20/20B01J20/28B01J20/30B01D53/02B82Y40/00B82Y30/00
CPCB01D53/02B01D2253/1124B01J20/0218B01J20/06B01J20/205B01J20/28007B01J20/28014B82Y30/00B82Y40/00C01G41/02C01P2002/72C01P2004/03C01P2004/04C01P2004/13C01P2004/64C01P2004/80
Inventor 王长亮田浩亮汤智慧郭孟秋崔永静高俊国张欢欢周子民
Owner AVIC BEIJING INST OF AERONAUTICAL MATERIALS
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