Quartz boat and solar cell diffusion process

Abstract

The invention discloses a quartz boat and a solar cell diffusion process. The quartz boat comprises at least three groove rods, wherein a plurality of tooth grooves are formed in each groove rod, are corresponding to one another and are used for placing silicon wafers, and the tooth distance between adjacent tooth grooves in the groove rod is increased in geometric progression by taking a first tooth distance as a reference. The solar cell diffusion process comprises a boat entering process, a constant-temperature process and a diffusion process. By the quartz board, the probability consistence that the silicon wafers contact with a diffusion source on different regions in a diffusion tube can be improved; moreover, by the solar cell diffusion process, the dosage of a nitrogen source can be reduced, the consistency of diffusion doping longitudinal concentration distribution in wafers and among wafers also can be improved, and the battery conversion efficiency consistency during mass production is further improved; and compared with a conventional diffusion process, the solar cell diffusion process has the advantages that the average efficiency of a battery piece which is prepared after employing the quartz boat and the diffusion process is improved by 0.05%, and the proportion of a low-efficiency battery piece with the battery conversion efficiency smaller than 18.0% is simultaneously reduced by 1.5%.

Description

technical field [0001] The invention belongs to the field of preparation of crystalline silicon cells, and in particular relates to a quartz boat and a solar cell diffusion process. Background technique [0002] In the field of crystalline silicon battery preparation, the core PN junction of the battery is usually prepared by high-temperature diffusion method, and the uniformity of the diffusion PN junction within and between sheets directly affects the performance of the battery and the stability of the electrical performance of the mass-produced battery. The surface concentration and junction depth of the diffused PN junction, that is, the longitudinal concentration distribution of the PN junction, determines the size of the PN junction test square resistance, thereby affecting the electrical properties of the PN junction. [0003] At present, a high-temperature diffusion furnace is widely used for high-temperature diffusion to prepare a PN junction. The commonly used hig...

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Problems solved by technology

The larger the average square resistance value of the diffusion, the higher the set temperature value at the gas outlet is to maintain the consistency of the diffusion square resistance. Although the uniformity between the chips is relatively good at this time, the longitudinal concentration distribution of the PN junction diffusion doping between the chips is seriously consistent. Deviation, that is, the poor consistency of the electrical properties of the PN junction between the chips, seriously affects the debugging of the front electrode printing and sintering process, and has a great negative impact on the stability of the battery efficiency

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