Array substrate and manufacturing method thereof, and display device

Abstract

The invention discloses an array substrate and a manufacturing method thereof, and a display device. The array substrate comprises a substrate, wherein a first region and a second region of the substrate are respectively provided with a first transistor and a second transistor, the first transistor has a first active layer, the first active layer is low temperature polysilicon, the second transistor has a second active layer, the second active layer is metal-oxide semiconductor, the first active layer, an interlayer dielectric layer and the second active layer are sequentially arranged on the substrate, and a blocking layer is arranged between the interlayer dielectric layer and the second active layer. The array substrate is advantaged in that through arranging the blocking layer, the insulation and hydrogen blocking effect between the interlayer dielectric layer of the low temperature polysilicon film transistor and the active layer of the oxide film transistor is realized, hydrogen penetration in the subsequent heat treatment technology between the low temperature polysilicon film transistor and the oxide film transistor can be prevented, and bad influence of transistor characteristics of the low temperature polycrystalline silicon film transistor and the oxide film transistor can be prevented.

Description

technical field [0001] The present disclosure relates to the field of display technology, in particular, to an array substrate, a manufacturing method thereof, and a display device. Background technique [0002] At present, AMOLED (Active Matrix Organic Light Emitting Diode, active matrix organic light emitting diode) technology is the development trend of electronic products, because of its wider viewing angle, higher refresh rate and thinner size, it is widely used in smartphones. been widely applied. [0003] LTPO (Low Temperature Polycrystalline Oxide, Low Temperature Polycrystalline Oxide) technology combines LTPS-TFT (Low Temperature Poly-silicon Thin Film Transistor, Low Temperature Polycrystalline Silicon Thin Film Transistor) and Oxide-TFT (Oxide Thin Film Transistor). The advantage of AMOLED products has certain technical advantages in high PPI (Pixels Per Inch, pixel density), low power consumption, high image quality, etc. In addition, due to the advantages of l...

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Problems solved by technology

[0004] Based on the above, the development of the LTPO process has high value and significance, but in the existing LTPO process, an Oxide layer needs to be formed on the LTPS layer, and the Oxide process involves multi-step heat treatment and annealing processes, which will lead to LTPS- The hydrogen in the ILD (Inter Layer Dielectric) layer of the TFT will enter Oxide in the subsequent heat treatment, affecting the transistor characteristics of the Oxide-TFT. The hydrogen and oxygen in the Oxide layer may enter the LTPS in the subsequent heat treatment. Transistor characteristics of LTPS-TFT

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