Current mode RM or non- xor unit based on FinFET transistor
A current mode and transistor technology, applied in the field of RM logic or non-exclusive OR unit, can solve the problems of large circuit area, delay and power consumption delay product, power consumption increase, etc., and achieve power consumption and power consumption delay The effect of small time product, reduced area, and reduced delay
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Embodiment 1
[0015] Embodiment one: if figure 2As shown, an RM or non-exclusive OR unit based on FinFET transistors includes a first P-type FinFET transistor P1, a second P-type FinFET transistor P2, a first N-type FinFET transistor N1, a second N-type FinFET transistor N2, The third N-type FinFET tube N3, the fourth N-type FinFET tube N4, the fifth N-type FinFET tube N5, the sixth N-type FinFET tube N6 and the seventh N-type FinFET tube N7, the first P-type FinFET tube P1 and the second N-type FinFET tube The P-type FinFET tube P2 is a low-threshold P-type FinFET tube, the first N-type FinFET tube N1, the second N-type FinFET tube N2, the third N-type FinFET tube N3, the fourth N-type FinFET tube N4, and the fifth N-type tube The FinFET tube N5 and the seventh N-type FinFET tube N7 are low-threshold N-type FinFET tubes, and the sixth N-type FinFET tube N6 is a high-threshold N-type FinFET tube; the source of the first P-type FinFET tube P1 and the second P-type FinFET tube The source of...
Embodiment 2
[0018] Embodiment two: if figure 2 As shown, an RM or non-exclusive OR unit based on FinFET transistors includes a first P-type FinFET transistor P1, a second P-type FinFET transistor P2, a first N-type FinFET transistor N1, a second N-type FinFET transistor N2, The third N-type FinFET tube N3, the fourth N-type FinFET tube N4, the fifth N-type FinFET tube N5, the sixth N-type FinFET tube N6 and the seventh N-type FinFET tube N7, the first P-type FinFET tube P1 and the second N-type FinFET tube The P-type FinFET tube P2 is a low-threshold P-type FinFET tube, the first N-type FinFET tube N1, the second N-type FinFET tube N2, the third N-type FinFET tube N3, the fourth N-type FinFET tube N4, and the fifth N-type tube The FinFET tube N5 and the seventh N-type FinFET tube N7 are low-threshold N-type FinFET tubes, and the sixth N-type FinFET tube N6 is a high-threshold N-type FinFET tube; the source of the first P-type FinFET tube P1 and the second P-type FinFET tube The source o...
Embodiment 3
[0022] Embodiment three: as figure 2 As shown, an RM or non-exclusive OR unit based on FinFET transistors includes a first P-type FinFET transistor P1, a second P-type FinFET transistor P2, a first N-type FinFET transistor N1, a second N-type FinFET transistor N2, The third N-type FinFET tube N3, the fourth N-type FinFET tube N4, the fifth N-type FinFET tube N5, the sixth N-type FinFET tube N6 and the seventh N-type FinFET tube N7, the first P-type FinFET tube P1 and the second N-type FinFET tube The P-type FinFET tube P2 is a low-threshold P-type FinFET tube, the first N-type FinFET tube N1, the second N-type FinFET tube N2, the third N-type FinFET tube N3, the fourth N-type FinFET tube N4, and the fifth N-type tube The FinFET tube N5 and the seventh N-type FinFET tube N7 are low-threshold N-type FinFET tubes, and the sixth N-type FinFET tube N6 is a high-threshold N-type FinFET tube; the source of the first P-type FinFET tube P1 and the second P-type FinFET tube The source...
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