Current-mode RM NOR-XOR unit based on FinFET device

A current mode and device technology, applied in the field of NOR-XOR unit, can solve the problems of increased power consumption, circuit area, large delay and power consumption delay product, and large number of transistors, so as to reduce the area, The power consumption and power consumption delay product are small, and the effect of reducing delay

Active Publication Date: 2017-09-29
NINGBO UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The RM logic does not avoid the series connection of CMOS transistors in the pull-down network, resulting in a three-layer logic. The series connection of CMOS transistors leads to a too long stack height from the power supply to the ground. In order to make the circuit...

Method used

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  • Current-mode RM NOR-XOR unit based on FinFET device
  • Current-mode RM NOR-XOR unit based on FinFET device
  • Current-mode RM NOR-XOR unit based on FinFET device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] Embodiment one: if figure 2As shown, a current mode RM or non-exclusive OR unit based on FinFET devices includes a first P-type FinFET transistor P1, a second P-type FinFET transistor P2, a first N-type FinFET transistor N1, and a second N-type FinFET transistor N2, the third N-type FinFET tube N3, the fourth N-type FinFET tube N4, the fifth N-type FinFET tube N5 and the sixth N-type FinFET tube N6, the first P-type FinFET tube P1 and the second P-type FinFET tube P2 respectively The first N-type FinFET N1, the third N-type FinFET N3 and the fourth N-type FinFET N4 are respectively high-threshold N-type FinFETs, the second N-type FinFET N2, the fifth N-type FinFET The N-type FinFET tube N5 and the sixth N-type FinFET tube N6 are respectively low-threshold N-type FinFET tubes; the source of the first P-type FinFET tube P1 and the source of the second P-type FinFET tube P2 are connected to the power supply VDD, and the The front gate of a P-type FinFET transistor P1, th...

Embodiment 2

[0018] Embodiment two: if figure 2 As shown, a current mode RM or non-exclusive OR unit based on FinFET devices includes a first P-type FinFET transistor P1, a second P-type FinFET transistor P2, a first N-type FinFET transistor N1, and a second N-type FinFET transistor N2, the third N-type FinFET tube N3, the fourth N-type FinFET tube N4, the fifth N-type FinFET tube N5 and the sixth N-type FinFET tube N6, the first P-type FinFET tube P1 and the second P-type FinFET tube P2 respectively The first N-type FinFET N1, the third N-type FinFET N3 and the fourth N-type FinFET N4 are respectively high-threshold N-type FinFETs, the second N-type FinFET N2, the fifth N-type FinFET The N-type FinFET tube N5 and the sixth N-type FinFET tube N6 are respectively low-threshold N-type FinFET tubes; the source of the first P-type FinFET tube P1 and the source of the second P-type FinFET tube P2 are connected to the power supply VDD, and the The front gate of a P-type FinFET transistor P1, t...

Embodiment 3

[0022] Embodiment three: as figure 2 As shown, a current mode RM or non-exclusive OR unit based on FinFET devices includes a first P-type FinFET transistor P1, a second P-type FinFET transistor P2, a first N-type FinFET transistor N1, and a second N-type FinFET transistor N2, the third N-type FinFET tube N3, the fourth N-type FinFET tube N4, the fifth N-type FinFET tube N5 and the sixth N-type FinFET tube N6, the first P-type FinFET tube P1 and the second P-type FinFET tube P2 respectively The first N-type FinFET N1, the third N-type FinFET N3 and the fourth N-type FinFET N4 are respectively high-threshold N-type FinFETs, the second N-type FinFET N2, the fifth N-type FinFET The N-type FinFET tube N5 and the sixth N-type FinFET tube N6 are respectively low-threshold N-type FinFET tubes; the source of the first P-type FinFET tube P1 and the source of the second P-type FinFET tube P2 are connected to the power supply VDD, and the The front gate of a P-type FinFET transistor P1,...

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PUM

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Abstract

The invention discloses a current-mode RM NOR-XOR unit based on a FinFET device. The current-mode RM NOR-XOR unit comprises the first P-type FinFET tube, the second P-type FinFET tube, the first N-type FinFET tube, the second N-type FinFET tube, the third N-type FinFET tube, the fourth N-type FinFET tube, the fifth N-type FinFET tube and the sixth N-type FinFET tube, wherein the first P-type FinFET tube and the second P-type FinFET tube are respectively the low-threshold P-type FinFET tube; the first N-type FinFET tube, the third N-type FinFET tube and the fourth N-type FinFET tube are respectively the high-threshold N-type FinFET tube; the second N-type FinFET tube, the fifth N-type FinFET tube and the sixth N-type FinFET tube are respectively the low-threshold N-type FinFET tube. The current-mode RM NOR-XOR unit disclosed by the invention has the advantage that the circuit area, the time delay, the power consumption and the power delay product are small on the basis of the correct logic function.

Description

technical field [0001] The invention relates to an OR non-exclusive OR unit, in particular to a current mode RM or non-exclusive OR unit based on a FinFET device. Background technique [0002] The basic gate circuit is the most basic logic unit in the digital circuit, and the XOR and XOR gate circuits are an indispensable part of the basic logic circuit. Current-mode logic circuits have the characteristics of high operating frequency, low power consumption, and strong anti-interference ability. However, traditional CMOS current-mode logic still faces the problems of large number of transistors, high power consumption, and complex design. With the continuous advancement of VLSI technology, the operating speed and power consumption requirements of digital systems continue to increase, and the performance requirements for basic logic units are also more stringent, requiring that basic logic units should have lower power consumption and smaller delay. [0003] When the size of ...

Claims

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Application Information

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IPC IPC(8): H03K19/20
CPCH03K19/20
Inventor 胡建平熊阳杨廷锋汪佳峰
Owner NINGBO UNIV
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