Preparation method and application of interface modification layer based on nickel protoxide hole transport layer
A technology of hole transport layer and interface modification layer, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as low stability and poor modification effect of interface modification layer, and achieve improved open circuit voltage and stable performance and improve the overall performance of the
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[0016] Embodiments of the present invention provide a method for preparing an interface modification layer based on a nickel oxide hole transport layer, comprising the following steps:
[0017] (1) Soak the NiO hole transport layer in the aqueous solution of the interface modifier:
[0018] (2) The interface modifier is adsorbed on one side of the nickel oxide hole transport layer and forms an interface modification layer;
[0019] Wherein, the interface modification agent is an organic molecule with an amino group at one end and a carboxyl group at the other end. It utilizes the characteristics of this type of organic molecule to allow it to be adsorbed on one side of the nickel oxide hole transport layer to form an interface modification layer. The surface contact angle of the hole transport layer of nickel oxide is changed, and the interface defect between the hole transport layer of nickel oxide and the perovskite film is passivated.
[0020] For specific settings, the in...
Embodiment 1
[0024] This embodiment 1 provides a preparation method of an interface modification layer based on a nickel oxide hole transport layer, which soaks the nickel oxide hole transport layer in an aqueous solution of 5-aminovaleric acid with a concentration of 0.32mmol / L12 Hours, 5-aminovaleric acid is adsorbed on one side of the nickel oxide hole transport layer and forms an interface modification layer.
Embodiment 2
[0026] This embodiment 2 provides a preparation method of an interface modification layer based on a nickel oxide hole transport layer, which soaks the nickel oxide hole transport layer in an aqueous solution of 5-aminovaleric acid with a concentration of 0.3mmol / L13 Hours, 5-aminovaleric acid is adsorbed on one side of the nickel oxide hole transport layer and forms an interface modification layer.
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