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Preparation method and application of interface modification layer based on nickel protoxide hole transport layer

A technology of hole transport layer and interface modification layer, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as low stability and poor modification effect of interface modification layer, and achieve improved open circuit voltage and stable performance and improve the overall performance of the

Inactive Publication Date: 2017-09-29
EZHOU INST OF IND TECH HUAZHONG UNIV OF SCI & TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to overcome above-mentioned technical deficiencies, propose a kind of preparation method and application of the interface modification layer of nickelous oxide hole transport layer, solve the poor modification effect of the interface modification layer of perovskite solar cell in the prior art The technical problem of its low stability

Method used

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preparation example Construction

[0016] Embodiments of the present invention provide a method for preparing an interface modification layer based on a nickel oxide hole transport layer, comprising the following steps:

[0017] (1) Soak the NiO hole transport layer in the aqueous solution of the interface modifier:

[0018] (2) The interface modifier is adsorbed on one side of the nickel oxide hole transport layer and forms an interface modification layer;

[0019] Wherein, the interface modification agent is an organic molecule with an amino group at one end and a carboxyl group at the other end. It utilizes the characteristics of this type of organic molecule to allow it to be adsorbed on one side of the nickel oxide hole transport layer to form an interface modification layer. The surface contact angle of the hole transport layer of nickel oxide is changed, and the interface defect between the hole transport layer of nickel oxide and the perovskite film is passivated.

[0020] For specific settings, the in...

Embodiment 1

[0024] This embodiment 1 provides a preparation method of an interface modification layer based on a nickel oxide hole transport layer, which soaks the nickel oxide hole transport layer in an aqueous solution of 5-aminovaleric acid with a concentration of 0.32mmol / L12 Hours, 5-aminovaleric acid is adsorbed on one side of the nickel oxide hole transport layer and forms an interface modification layer.

Embodiment 2

[0026] This embodiment 2 provides a preparation method of an interface modification layer based on a nickel oxide hole transport layer, which soaks the nickel oxide hole transport layer in an aqueous solution of 5-aminovaleric acid with a concentration of 0.3mmol / L13 Hours, 5-aminovaleric acid is adsorbed on one side of the nickel oxide hole transport layer and forms an interface modification layer.

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Abstract

The invention discloses a preparation method and application of an interface modification layer based on a nickel protoxide hole transport layer. The preparation method comprises the following steps: (1) immersing the nickel protoxide hole transport layer in the aqueous solution of an interface modification agent; and (2) adsorbing the interface modification agent to a side of the nickel protoxide hole transport layer and forming the interface modification layer, wherein the interface modification agent is an organic molecule with an amino group at one end and a carboxyl group at the other end. By using the characteristics of the organic molecule with an amino group at one end and a carboxyl group at the other end, the organic molecule can be adsorbed to the nickel protoxide hole transport layer to form the interface modification layer to change the surface contact angle of the nickel protoxide hole transport layer, passivate the interface defect of the nickel protoxide hole transport layer and a perovskite film, improve the open-circuit voltage and the stability of a perovskite solar cell prepared subsequently, and further improve the overall performance of the perovskite solar cell.

Description

technical field [0001] The invention relates to the preparation technology of technical solar cells, in particular to a preparation method and application of an interface modification layer based on a nickel oxide hole transport layer. Background technique [0002] With the increasing shortage of energy, people pay more and more attention to the research of new energy, especially solar cells. Traditional silicon cells are relatively expensive, dye-sensitized cells have many limitations in preparation technology, and organic solar cells have a simple structure but poor stability, so they still have many problems in industrialization. [0003] Since the first report in 2009, perovskite solar cells have been favored by researchers for their ultra-low-cost solution preparation process, and the energy conversion efficiency has increased from the initial 3.8% to more than 20%. With the deepening of research , the efficiency of the cell is very likely to exceed the current mature ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48H01L51/42
CPCH10K30/10Y02E10/549
Inventor 陈炜
Owner EZHOU INST OF IND TECH HUAZHONG UNIV OF SCI & TECH
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