Gas transmission device for HVPE (hydride vapor phase epitaxy), reaction chamber and HVPE equipment

A technology of gas transmission and reaction chamber, applied in the direction of chemically reactive gas, crystal growth, gaseous chemical plating, etc., can solve the problem of poor uniformity of epitaxial layer thickness and components, and achieve the effect of improving uniformity and gas flow uniformity

Inactive Publication Date: 2017-09-22
镓特半导体科技(上海)有限公司
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  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a gas transmission device for HVPE, a reaction chamber and HVPE equipment, which are used to solve the problem of poor uniformity of the thickness of the epitaxial layer and its components in the prior art. question

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  • Gas transmission device for HVPE (hydride vapor phase epitaxy), reaction chamber and HVPE equipment
  • Gas transmission device for HVPE (hydride vapor phase epitaxy), reaction chamber and HVPE equipment
  • Gas transmission device for HVPE (hydride vapor phase epitaxy), reaction chamber and HVPE equipment

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Embodiment Construction

[0039] The implementation of the present invention will be illustrated by specific specific examples below, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification.

[0040] see Figure 1 to Figure 2 , The first embodiment of the present invention relates to a gas delivery device for HVPE. It should be noted that the structures, proportions, sizes, etc. shown in the drawings attached to this specification are only used to match the content disclosed in the specification, for those who are familiar with this technology to understand and read, and are not used to limit the implementation of the present invention. Limiting conditions, so there is no technical substantive meaning, any modification of structure, change of proportional relationship or adjustment of size, without affecting the effect and purpose of the present invention, should still fall within the scope of the present...

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Abstract

The invention provides a gas transmission device for HVPE (hydride vapor phase epitaxy), a reaction chamber and HVPE equipment. The gas transmission device for the HVPE at least comprises a plurality of metal-containing precursor gas channel pipelines, a shielding gas channel pipeline and a nitrogen-containing precursor gas channel pipeline, wherein the shielding gas channel pipeline is arranged outside all the metal-containing precursor gas channel pipelines in a sleeving manner; the nitrogen-containing precursor gas channel pipeline is positioned above or on one side of the shielding gas channel pipeline. According to the gas transmission device for the HVPE disclosed by the invention, the phenomenon that mixed precursor gas is adhered to the outer wall of the gas transmission device so as to cause cracking of the outer wall is avoided, so that the mixing uniformity of nitrogen-containing precursor gas and metal-containing precursor gas is improved, the airflow uniformity is improved, and thus, the thickness of an epitaxial layer grown on the surface of a substrate and the uniformity of components of the epitaxial layer are improved.

Description

technical field [0001] The invention relates to the technical field of vapor phase epitaxy deposition, in particular to a gas transmission device for HVPE, a reaction chamber and HVPE equipment. Background technique [0002] Hydride Vapor Phase Epitaxy (HVPE, Hydride Vapor Phase Epitaxy) equipment is a compound growth process equipment, mainly used in a high temperature environment of about 1000 degrees through such as H 2 , HCl and other hydride gases to epitaxially grow a thick film or crystal such as GaAs or GaN on the surface of the substrate. [0003] The most important indicator of epitaxial layer growth is the uniformity of its growth thickness and its composition. This requires uniform mixing of precursor gases in the reaction zone above the substrate and better gas flow uniformity. However, using existing HVPE equipment, when growing epitaxial layers on the surface of one or more substrates, the mixing of the precursor gases in the reaction zone is often not unifo...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/14C30B25/08C23C16/455
CPCC30B25/14C23C16/45561C30B25/08
Inventor 特洛伊·乔纳森·贝克罗晓菊王颖慧谢宇
Owner 镓特半导体科技(上海)有限公司
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