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Strip metasurface-structured polarization-dependent narrowband detector and preparation method and application thereof

A polarization-related and detector technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of absorption bandwidth, low absorption efficiency, and difficult manufacturing process

Active Publication Date: 2017-09-15
HUAZHONG UNIV OF SCI & TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In recent years, many researchers have proposed infrared metasurface absorbers with different structures, but there are not many studies on narrow-band absorbers in the short-wave infrared region to make detectors, or these structures have low absorption efficiency and wide absorption bands. , difficult preparation process and other disadvantages

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  • Strip metasurface-structured polarization-dependent narrowband detector and preparation method and application thereof
  • Strip metasurface-structured polarization-dependent narrowband detector and preparation method and application thereof
  • Strip metasurface-structured polarization-dependent narrowband detector and preparation method and application thereof

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Embodiment 1

[0042] A polarization-dependent narrow-band detector based on a strip metasurface structure based on colloidal quantum dots, figure 1 It is the overall structure diagram of the detector of the present invention, including gold backplane 1, positive and negative gold electrodes 2, colloidal quantum dots 3, periodic strip structure 4, silicon 5 and silicon dioxide 6; positive and negative gold electrodes 2 are located on the gold backplane 1 on both sides and both are located on the lower surface of the colloidal quantum dot 3, the colloidal quantum dot 3 is coated on the surface layer of the periodic strip structure 4, and is coated on the space between each periodic strip structure 4 on the lower surface of the silicon 5 , the periodic strip structures 4 are located side by side on the lower surface of the silicon 5 , and the silicon dioxide 6 is located on the upper surface of the silicon 5 . . The thickness of the above periodic strip structure is 65nm, the width of the uni...

Embodiment 2

[0044] A polarization-dependent narrow-band detector based on a strip metasurface structure based on colloidal quantum dots, figure 1 It is the overall structure diagram of the detector of the present invention, including gold backplane 1, positive and negative gold electrodes 2 (for detecting voltage\current signals), colloidal quantum dots 3, periodic strip structure 4, silicon 5 and silicon dioxide 6; The positive and negative gold electrodes 2 are located on both sides of the gold back plate 1 and both are located on the lower surface of the colloidal quantum dots 3. The colloidal quantum dots 3 are coated on the surface layer of the periodic strip structure 4, and are coated on the lower surface of the silicon 5. In the part spaced between the strip structures 4 , the periodic strip structures 4 are located side by side on the lower surface of the silicon 5 , and the silicon dioxide 6 is located on the upper surface of the silicon 5 . The thickness of the above periodic s...

Embodiment 3

[0046] A polarization-dependent narrow-band detector based on a strip metasurface structure based on colloidal quantum dots, figure 1 It is the overall structure diagram of the detector of the present invention, including gold backplane 1, positive and negative gold electrodes 2, colloidal quantum dots 3, periodic strip structure 4, silicon 5 and silicon dioxide 6; positive and negative gold electrodes 2 are located on the gold backplane 1 on both sides and both are located on the lower surface of the colloidal quantum dot 3, the colloidal quantum dot 3 is coated on the surface layer of the periodic strip structure 4, and is coated on the space between each periodic strip structure 4 on the lower surface of the silicon 5 , the periodic strip structures 4 are located side by side on the lower surface of the silicon 5 , and the silicon dioxide 6 is located on the upper surface of the silicon 5 . The thickness of the above periodic strip structure is 50nm, the width of the unit s...

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Abstract

The invention discloses a colloidal quantum dot-based strip metasurface-structured polarization-dependent narrowband detector and a preparation method thereof. The preparation method comprises the following steps of enabling a layer of silicon to be grown on a glass plate; performing spin coating of photoresist; transferring a strip array structure to perform developing treatment; performing photoresist removal; performing spin coating of quantum dots; and performing evaporation of a layer of gold by electron beam evaporation equipment. Based on the resonance effect of the strip array structure on the short-wave infrared specific wavelength, all absorption of light of specific wavelength is realized; by adjusting the geometrical structure parameters of the strip array structure, optical absorption is controlled to realize adjustment of specific wavelengths and absorption from visible light to infrared light; in addition, polarization dependence is achieved, and then the detector is prepared from the colloidal quantum dot material; and the preparation method is simple and easy, high in response, high in operability, and has wide application prospect.

Description

technical field [0001] The invention belongs to the field of polarization-dependent narrow-band detectors, and in particular relates to a polarization-dependent narrow-band detector with strip metasurface structure. Background technique [0002] At present, the development direction of infrared detection technology is mainly reflected in high-resolution detection, multi-spectral detection, infrared polarization detection and so on. In order to realize the integration of multi-detection technologies and complete the efficient detection, utilization and processing of infrared rays in the environment, a suitable infrared absorber material is required. The material needs to have excellent absorption performance and strong operability, and metasurfaces meet this requirement. Potential solutions for needs. [0003] A metasurface is an artificially manufactured periodic unit structure with a sub-wavelength size, and its period length is generally smaller than the incident waveleng...

Claims

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Application Information

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IPC IPC(8): H01L31/0352H01L31/09
CPCH01L31/035218H01L31/09
Inventor 易飞刘欢郭颂谈小超杨奥李君宇蒋顺周仑
Owner HUAZHONG UNIV OF SCI & TECH
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