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Method for preparing electron-level trichlorosilane

A trichlorosilane, electronic-grade technology, applied in chemical instruments and methods, silicon compounds, halosilanes, etc., can solve the problems of high energy consumption in the purification process and unstable product quality

Inactive Publication Date: 2017-08-18
CHINA SILICON CORP LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention aims to provide a method for preparing electronic grade trichlorosilane to solve the technical problems of high energy consumption and unstable product quality in the purification process of preparing electronic grade trichlorosilane in the prior art

Method used

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  • Method for preparing electron-level trichlorosilane
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  • Method for preparing electron-level trichlorosilane

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] use figure 1 The process shown, using figure 2 The device shown, the specific test parameters are listed in Table 1.

[0031] Table 1

[0032]

[0033] Under the above conditions, the product trichlorosilane has a purity of 9N, a resistivity ≥ 1000Ω.cm, a B impurity content of 0.04ppb, a P impurity content of 0.07ppb, and an Al impurity content of 0.09ppb.

Embodiment 2

[0035] use figure 1 The process shown, using figure 2 The device shown, the specific test parameters are shown in Table 2.

[0036] Table 2

[0037]

[0038] Under the above conditions, the purity of the product trichlorosilane reaches 9N, the B impurity content is 0.01ppb, the P impurity content is 0.02ppb and the Al impurity is 0.07ppb.

Embodiment 3

[0040] use figure 1 The process shown, using figure 2 The device shown, the specific test parameters are shown in Table 3.

[0041] table 3

[0042]

[0043] Under the above conditions, the purity of the product trichlorosilane reaches 9N, the B impurity content is 0.04ppb, the P impurity content is 0.06ppb and the Al impurity is 0.11ppb.

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Abstract

The invention discloses a method for preparing electron-level trichlorosilane. The method comprises the following steps of S1, enabling aromatic aldehyde or derivative of aromatic aldehyde and raw material of trichlorosilane to react, so as to obtain a reaction product; S2, removing one part of heavy component from the reaction product, and then removing a light component and the remained heavy component, so as to obtain a purifying product; S3, sending the purifying product into an adsorbing and purifying unit, and removing impurities, so as to obtain the electron-level trichlorosilane. By adopting the technical scheme, the method has the advantages that the process is greatly shortened by the technology, the equipment investment is reduced, the energy consumption in running is decreased, and the product quality can reach the electron level.

Description

technical field [0001] The invention relates to the field of chemical industry, in particular to a method for preparing electronic grade trichlorosilane. Background technique [0002] Electronic grade trichlorosilane (purity above 9N) belongs to silicon source electron special gas, mainly used for silicon source gas of silicon epitaxial wafers, it is currently mainly used for orientation epitaxy of crystalline silicon, silicon nitride preparation and large-scale Preparation of polysilicon in integrated circuits. At present, the domestic market demand for trichlorosilane electronic gas continues to grow, but the production of trichlorosilane above electronic grade in my country is insufficient, and high-purity trichlorosilane electronic gas is heavily dependent on overseas markets. [0003] At present, the domestic production of high-purity trichlorosilane mainly uses the traditional purification tower purification mode, and it is purified by multiple towers in series, which...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/107
CPCC01B33/1071C01P2006/80
Inventor 刘见华赵雄万烨姜丽霞郭树虎杨永亮严大洲杜俊平张升学
Owner CHINA SILICON CORP LTD
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