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A collection device and vapor deposition system for organometallic compound companions

An organic metal, collecting device technology, applied in metal material coating process, gaseous chemical plating, coating and other directions, can solve the pollution and damage of dry pump and check valve, unfavorable components of exhaust pipe, expensive maintenance and replacement costs and other problems, to achieve the effect of reducing the frequency of replacement, slowing down the flow speed, and reducing the burden

Active Publication Date: 2018-04-20
TANG OPTOELECTRONICS EQUIPMENT (SHANGHAI) CORPORATION LIMITED
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the above-mentioned filter elements are consumables and need to be replaced regularly every month. If you choose a filter element with a smaller pore size, the life of the equipment control components can be guaranteed, but the maintenance time and cost will be increased.
If you choose a filter element with a larger pore size, the replacement cycle can be extended, but it is extremely unfavorable to the related components of the exhaust pipe. After one year of use, both the dry pump and the check valve will be polluted and damaged, and require expensive maintenance and replacement costs.

Method used

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  • A collection device and vapor deposition system for organometallic compound companions
  • A collection device and vapor deposition system for organometallic compound companions
  • A collection device and vapor deposition system for organometallic compound companions

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Embodiment Construction

[0025] The technical solutions of the present invention will be further described below in conjunction with the accompanying drawings and through specific implementation methods.

[0026] like Figure 1-2 As shown, a device for collecting accompanying organisms of organometallic compounds comprises a casing 1, gas inlet 2 and gas outlet 3 are arranged at both ends of the casing 1, and a plurality of baffles 4 are layered and fixed on the inner wall of the casing 1, and the baffles 4 The included angle with the intake direction is less than 180°, so that the gas can be deposited on the baffle 4 during the process from the gas inlet 2 to the gas outlet 3, and each baffle 4 is provided with an opening 5, and the gap between different baffles 4 The gap and the opening 5 on the baffle plate 4 form the flow channel of the gas. The cross-sectional area of ​​the flow channel increases gradually along the flow direction of the gas, and the gas flow rate is inversely proportional to the...

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Abstract

The invention discloses a metallo-organic compound concomitant collecting device and a vapor deposition system, and relates to the technical field of vapor deposition. The collecting device comprises a shell, an air inlet and an air outlet are formed in the two ends of the shell, a plurality of baffles are fixed to the inner wall of the shell in a layered manner, and included angles between the baffles and the air inlet direction are smaller than 180 degrees; and an opening is formed in each baffle, a flowing channel is formed by gaps between the different baffles and the openings in the baffles, the cross-sectional areas of the flowing channel are gradually increased in the air flowing direction, and the openings in the adjacent baffles are staggered. By means of the metallo-organic compound concomitant collecting device and the vapor deposition system, deposition of different concomitants can be achieved, loads of follow-up filter elements are reduced, and the service life of the filter elements is prolonged; and the collecting device can be repeatedly used, and cost is saved.

Description

technical field [0001] The invention relates to the technical field of vapor deposition, in particular to a collection device and a vapor deposition system of organometallic compound companions. Background technique [0002] At present, the mass production equipment for the commercialization of gallium nitride semiconductor materials is mainly metal organic source vapor deposition system (MOCVD). After the decomposition of organometallic sources (trimethyl, triethyl), a large number of accompanying substances (such as carbon, hydrogen) will be produced. Among them, the generation of carbon has the greatest impact on the operation of the equipment. For every 1000 grams of trimethylgallium, the typical use efficiency is about 24.4%, so 756 grams of companions (carbon and gallium, of which carbon accounts for 391 grams) will be produced. Therefore, in the case of long-term operation, a large number of accompanying substances will accumulate in the exhaust system from the upstr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/44
CPCC23C16/4412
Inventor 林桂荣邢志刚徐春阳
Owner TANG OPTOELECTRONICS EQUIPMENT (SHANGHAI) CORPORATION LIMITED
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