Gas transmission apparatus for hydride vapor phase epitaxy (HVPE), reaction chamber and HVPE device

A gas transmission and reaction chamber technology, applied in the direction of chemical reactive gas, crystal growth, gaseous chemical plating, etc., can solve the problem of poor uniformity of epitaxial layer thickness components, and achieve the effect of ensuring uniformity and improving uniformity.

Inactive Publication Date: 2017-08-04
镓特半导体科技(上海)有限公司
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  • Abstract
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  • Claims
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Problems solved by technology

[0006] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a gas transmission device for HVPE, a reaction chamber and HVPE equipment, which are used to solve the problem of poor uniformity of the thickness of the epitaxial layer and its components in the prior art. question

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  • Gas transmission apparatus for hydride vapor phase epitaxy (HVPE), reaction chamber and HVPE device
  • Gas transmission apparatus for hydride vapor phase epitaxy (HVPE), reaction chamber and HVPE device
  • Gas transmission apparatus for hydride vapor phase epitaxy (HVPE), reaction chamber and HVPE device

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Embodiment Construction

[0042] The implementation of the present invention will be illustrated by specific specific examples below, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification.

[0043] see Figure 1 to Figure 2 , The first embodiment of the present invention relates to a gas delivery device for HVPE. It should be noted that the structures, proportions, sizes, etc. shown in the drawings attached to this specification are only used to match the content disclosed in the specification, for those who are familiar with this technology to understand and read, and are not used to limit the implementation of the present invention. Limiting conditions, so there is no technical substantive meaning, any modification of structure, change of proportional relationship or adjustment of size, without affecting the effect and purpose of the present invention, should still fall within the scope of the present...

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Abstract

The invention provides a gas transmission apparatus for HVPE, a reaction chamber and a HVPE device. The gas transmission apparatus for HVPE at least comprises a metal-containing precursor gas passage pipeline, a shielding gas passage pipeline and a nitrogen-containing precursor gas passage pipeline, wherein the shielding gas passage pipeline sleeves the metal-containing precursor gas passage pipeline to form a double-sleeve structure, and the nitrogen-containing precursor gas passage pipeline is located above or at one side of the double-sleeve structure. The gas transmission apparatus for HVPE prevents the gas transmission apparatus from fracture caused by adhesion of mixed precursor gas onto the outer wall of the gas transmission apparatus, improves the uniformity of mixing of metal-containing precursor gas and nitrogen-containing precursor gas and enhances the uniformity of gas flow, so the thickness of an epitaxial layer grown on the surface of a substrate and the uniformity of the components of the epitaxial layer are improved.

Description

technical field [0001] The invention relates to the technical field of vapor phase epitaxy deposition, in particular to a gas transmission device for HVPE, a reaction chamber and HVPE equipment. Background technique [0002] Hydride Vapor Phase Epitaxy (HVPE, Hydride Vapor Phase Epitaxy) equipment is a compound growth process equipment, mainly used in a high temperature environment of about 1000 degrees through such as H 2 , HCl and other hydride gases to epitaxially grow a thick film or crystal such as GaAs or GaN on the surface of the substrate. [0003] The most important indicator of epitaxial layer growth is the uniformity of its growth thickness and its composition. This requires uniform mixing of precursor gases in the reaction zone above the substrate and better gas flow uniformity. However, using existing HVPE equipment, when growing epitaxial layers on the surface of one or more substrates, the mixing of the precursor gases in the reaction zone is often not unifo...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/14C30B25/08C23C16/455
CPCC30B25/14C23C16/45561C30B25/08
Inventor 特洛伊·乔纳森·贝克王颖慧罗晓菊谢宇
Owner 镓特半导体科技(上海)有限公司
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