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Method of manufacturing semiconductor device, array substrate and display apparatus

An array substrate and semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical solid-state devices, etc., can solve problems such as not achieving significant results, and achieve the effects of improving electrical performance, reducing contact resistance, and low defects

Active Publication Date: 2017-07-28
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] For the above problems, although necessary research and development have been carried out in this field, notable results have not been achieved yet.

Method used

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  • Method of manufacturing semiconductor device, array substrate and display apparatus
  • Method of manufacturing semiconductor device, array substrate and display apparatus
  • Method of manufacturing semiconductor device, array substrate and display apparatus

Examples

Experimental program
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Effect test

example 1

[0049] First, a gate and a gate insulating layer are formed on a glass substrate. Then, a first oxide semiconductor layer having a thickness of 20 nm was formed by deposition on the gate insulating layer. Here, IGZO is employed as the semiconductor oxide forming the first oxide semiconductor layer.

[0050] Then, a concentration of 15 wt% H 2 o 2 The solution is sprayed onto the surface of the first oxide semiconductor layer, and at the same time irradiated with ultraviolet light to promote the H 2 o 2 Decomposed into OH groups. The irradiation time of ultraviolet light is 1 minute, and the irradiation intensity is 5000 nits.

[0051] Then, the H existing on the first oxide semiconductor layer 2 o 2 The solution was dried, and the second oxide semiconductor layer was deposited to a thickness of 10 nm in an oxygen-free atmosphere. Here, IGZO is employed as the semiconductor oxide forming the second oxide semiconductor layer.

[0052] Next, a semiconductor pattern can b...

example 2

[0054] First, a gate and a gate insulating layer are formed on a glass substrate. Then, a first oxide semiconductor layer having a thickness of 30 nm was formed by deposition on the gate insulating layer. Here, ITZO is employed as the semiconductor oxide forming the first oxide semiconductor layer.

[0055] Then, a concentration of 10 wt% H 2 o 2 The solution is sprayed onto the surface of the first oxide semiconductor layer, and at the same time irradiated with ultraviolet light to promote the H 2 o 2 Decomposed into OH groups. The irradiation time of ultraviolet light is 2 minutes, and the irradiation intensity is 5000 nits.

[0056] Then, the H existing on the first oxide semiconductor layer 2 o 2 The solution was dried, and the second oxide semiconductor layer was deposited to a thickness of 15 nm in an oxygen-free atmosphere. Here, IGZO is employed as the semiconductor oxide forming the second oxide semiconductor layer.

[0057] Next, a semiconductor pattern can ...

example 3

[0059] First, a gate and a gate insulating layer are formed on a glass substrate. Then, a first oxide semiconductor layer having a thickness of 40 nm was formed by deposition on the gate insulating layer. Here, ZnO is employed as the semiconductor oxide forming the first oxide semiconductor layer.

[0060] Then, the concentration of 20 wt% H 2 o 2 The solution is sprayed onto the surface of the first oxide semiconductor layer, and at the same time irradiated with ultraviolet light to promote the H 2 o 2 Decomposed into OH groups. The irradiation time of ultraviolet light is 1 minute, and the irradiation intensity is 6000 nits.

[0061] Then, the H existing on the first oxide semiconductor layer 2 o 2 The solution was dried, and the second oxide semiconductor layer was deposited to a thickness of 10 nm in an oxygen-free atmosphere. Here, ZTO is employed as the semiconductor oxide forming the second oxide semiconductor layer.

[0062] Next, a semiconductor pattern can b...

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Abstract

The invention provides a method of manufacturing a semiconductor device, an array substrate and a display apparatus. The method of manufacturing the semiconductor device comprises the following steps of depositing a first oxide semiconductor layer on a substrate and spraying an H2O2 solution on the first oxide semiconductor layer; using ultraviolet light to irradiate the H2O2 solution so as to promote H2O2 decomposition; and drying the H2O2 solution existing on the first oxide semiconductor layer and continuously depositing a second oxide semiconductor layer.

Description

technical field [0001] The present disclosure relates to the field of display technology, and more particularly, to a method of manufacturing a semiconductor device, an array substrate including the semiconductor device, and a display device including the array substrate. Background technique [0002] With the development of flat panel display technology, display devices using thin film transistors (TFTs) as switching elements have attracted much attention. Liquid crystal display devices using silicon material (amorphous silicon and polysilicon) TFTs as drive units are widely used due to their small size, light weight, and high quality. However, amorphous silicon has disadvantages such as low field-effect mobility, strong photosensitivity, and opaque material, while polysilicon TFT has the disadvantages of complex manufacturing process and difficult low-temperature process when applied to large-size panels. [0003] Due to its high transmittance, high mobility and low depos...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L29/786H01L27/12
Inventor 温钰胡合合
Owner BOE TECH GRP CO LTD
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