A kind of thin film transistor and its manufacturing method, array substrate

Abstract

The invention discloses a thin film transistor, a manufacturing method thereof, and an array substrate, which relate to the field of display technology and are used for improving the yield rate of the thin film transistor on the premise of reducing the size of the thin film transistor. The thin film transistor is formed on the base substrate, and the thin film transistor includes a gate and an active layer; the active layer is provided with a first signal metal layer facing the surface of the base substrate, and the active layer is away from the A second signal metal layer is provided on the surface of the first signal metal layer; the active layer includes a conductive channel formation region, and the second signal metal layer does not cover the conductive channel formation region of the active layer. The thin film transistor, its manufacturing method and array substrate provided by the invention are used for the miniaturization of the thin film transistor.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor, a manufacturing method thereof, and an array substrate. Background technique [0002] In recent years, with the development of large-scale liquid crystal displays and active organic light-emitting diodes, traditional amorphous silicon thin-film transistors and organic thin-film transistors have been difficult to meet user needs, and Indium Gallium Zinc Oxide (Indium Gallium Zinc Oxide, referred to as The transparent amorphous oxide semiconductor represented by IGZO) has the advantages of high mobility, good uniformity, and transparency, and is widely used in the active layer of the oxide thin film transistor, so that the oxide thin film transistor can meet the requirements of the new generation display. user needs. [0003] At present, the common oxide thin film transistors mainly include the following two types, one is an etching stop layer (hereinafter...

AI Technical Summary

Problems solved by technology

But, just because the source 6, the drain 7 of the BCE thin film transistor and the active layer 4 are arranged in the same layer, in the process of etching the source 6 and the drain 7, the etching of the source 6 and the drain 7 The conductive channel of the active layer 4 formed before the liquid is easy to corrode and damage; and when the etching of the source electrode 6 and the drain electrode 7 is completed, when the conductive channel of the active layer 4 is subjected to plasma oxidation treatment, the source electrode 6 and the drain electrode The etched metal surface of the drain electrode 7 is also easily oxidized by the plasma oxidation treatment

Therefore, in the manufacturing process of the BCE thin film transistor, it is easy to occur that the conductive channel of the active layer 4 is corroded and damaged, or the source electrode 6 and the drain electrode 7 are oxidized, or the conductive channel of the active layer 4 is corroded and damaged and the source The case where the pole 6 and the drain 7 are oxidized, thereby weakening or damaging the conductivity of the BCE thin film transistor and reducing the yield of the BCE thin film transistor

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