Preparation method of display substrate, array substrate and display apparatus

Abstract

The embodiment of the invention provides a preparation method of a display substrate, an array substrate and a display apparatus, and relates to the technical field of display, solving the problem that a traditional contact hole process can cause solidification of photoresist, particle residue; the process time is prolonged; and the equipment maintenance period is shortened. The preparation method of a display substrate includes the steps: forming first wiring, a first insulating layer, first and second metal layers, and a photoresist layer; forming a photoresist reservation pattern above the first wiring; forming second and first metal layer reservation patterns below the photoresist reservation pattern, wherein the etching rate of the first metal layer is greater than the etching rate of the second metal layer; removing the photoresist reservation pattern; forming a second insulating layer, wherein the thickness of the second insulating layer is equal to the sum of the thickness of the first and second metal layers; and the second insulating layer is provided with a fracture area at the juncture covering the first insulating layer and the second metal level reservation pattern; utilizing a wet etching process to remove the first and second metal level reservation patterns to expose the first insulating layer; and forming a contact hole exposing the first wiring.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a method for preparing a display substrate, an array substrate and a display device. Background technique [0002] Dry etching (Dry Etch) is to use high-energy plasma to hit the surface of the film to etch the film. It is widely used in the manufacturing fields of semiconductors and flat panel displays. [0003] The existing field of display panel preparation involves the process of forming a contact hole (full name contact, abbreviated as CNT) on the insulating layer. The main step is to form a photoresist layer with a certain pattern on the insulating layer; The exposed areas of the insulating layer are etched to form vias in desired areas. Etch targets are usually oxides and / or nitrides (e.g. silicon oxide SiO x and / or silicon nitride SiN y ), when etching the area of ​​the insulating layer exposed by the photoresist, due to the large thickness of the film layer to be etch...

AI Technical Summary

Problems solved by technology

Etch targets are usually oxides and / or nitrides (e.g. silicon oxide SiO x and / or silicon nitride SiN y ), when etching the area of ​​the insulating layer exposed by the photoresist, due to the large thickness of the film layer to be etched (thickness is generally above 400nm), the required etching time is longer, resulting in the photoresist The remaining part is bombarded by plasma for a long time in dry etching, which is easy to cause PR Burning (full name Photoresist Burning, that is, photoresist curing), and then wet etching is used to strip (Wet Strip) the photolithography remaining on the rest of the insulating layer. When glueing, there will be more Floating Particles (residual particles after the photoresist is cured) that cannot be stripped (stripped off) on the insulating layer; at the same time, the tact time (that is, the process time) of the dry etching equipment will be prolonged, A series of adverse effects such as the shortening of the PM (full name Periodic Maintenance) cycle required for the equipment chamber

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