Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for setting working voltage of silicon photomultiplier in gamma detection system

A technology of a silicon photomultiplier tube and a detection system, which is applied in the field of gamma ray detection, can solve the problems such as the setting method of the best working voltage of SiPM that has not been seen before, and achieve the effect of the best detection ability.

Inactive Publication Date: 2017-06-27
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] At present, in the published literature, there is no method for setting the optimal working voltage of SiPM

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for setting working voltage of silicon photomultiplier in gamma detection system
  • Method for setting working voltage of silicon photomultiplier in gamma detection system
  • Method for setting working voltage of silicon photomultiplier in gamma detection system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] The present invention will be further described below in conjunction with the accompanying drawings and embodiments, but the protection scope of the present invention should not be limited thereby.

[0027] The specific implementation steps are as follows:

[0028] 1) Put the gamma detection system in a constant temperature and humidity environment for 12-24 hours, so that the gamma radiation detector is in a stable state before detection. Generally, put the gamma radiation detector in a constant temperature and humidity environment for 18 hours.

[0029] 2) Select a gamma radiation source, the gamma radiation source has a definite energy spectrum, and there is only one all-energy peak in its energy spectrum;

[0030] The Cs137 gamma radiation source is mainly selected, because Cs137 has a definite energy spectrum, and it has only one all-energy peak at 661KeV.

[0031] 3) Define the working voltage array V[V 0 ,V 1 ,V 2 ...V k ...V n-1 ,V n ], SNR array Y[Y 0 ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method for setting the working voltage of a silicon photomultiplier in a gamma detection system includes the following steps: placing the gamma detection system in a constant-temperature constant-humidity environment; selecting a gamma radiation source; applying working voltage V to the silicon photomultiplier; placing the selected gamma radiation source in front of the gamma detection system at a distance of L, and using a multichannel collection system of the gamma detection system to collect outputs of the silicon photomultiplier for m times; calculating a signal to noise ratio Y<k> when the working voltage is V; and searching for the maximum element Y<max> in a signal to noise ratio array Y, the corresponding V<max> being the optical working voltage of the silicon photomultiplier in the gamma detection system. Through the method provided by the invention, the optical working voltage can be found out from a breakdown voltage and overvoltage range provided by a manufacturer, thereby providing optimal detectivity for the gamma detection system.

Description

technical field [0001] The invention relates to the field of gamma ray detection, in particular to a method for setting the working voltage of a silicon photomultiplier tube in a gamma detection system Background technique [0002] The gamma detection system usually consists of three parts: scintillation crystal, photoelectric conversion device, and subsequent signal processing circuit. Gamma rays first pass through the scintillation crystal, and after depositing energy in the scintillation crystal, the scintillation crystal emits an optical signal that can be detected by the photoelectric conversion device; the optical signal is converted into a corresponding electrical signal output after passing through the photoelectric conversion device; the output electrical signal After the subsequent signal processing circuit performs denoising, smoothing and other processing, a corresponding energy spectrum is formed. [0003] At present, a photomultiplier tube (PMT) is often used ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01T7/00
CPCG01T7/00
Inventor 黄立华荀爱兵李顺郭凯黄惠杰沈百飞
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com