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Thin film encapsulation structure and preparation method of organic electroluminescent device

An electroluminescent device and thin-film packaging technology, which is applied in the manufacturing of organic semiconductor devices, electric solid-state devices, and semiconductor/solid-state devices, etc. The effect of reducing the loss of light reflection

Active Publication Date: 2019-06-21
NANJING GUOZHAO OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is that the existing organic electroluminescent diode (OLED) devices have the problem of large light reflection loss and poor light extraction effect, and to invent a thin film packaging structure and preparation method of organic electroluminescent devices

Method used

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  • Thin film encapsulation structure and preparation method of organic electroluminescent device

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Such as figure 1 Shown:

[0033] A thin-film encapsulation structure of an organic electroluminescence device, which is prepared through the following steps:

[0034] (1) A top-emitting OLED device 2 is formed on a glass substrate 1 by a thermal evaporation method.

[0035] (2) Prepare the light layer 3 on the cathode of the OLED device by thermal evaporation.

[0036] (3) In step (2), the thickness of the light exit layer is 30nm, the refractive index is 1.65, and the material is SiO.

[0037] (4) ALD is used to deposit an inorganic oxide layer 41 on the light-extracting layer 3 .

[0038] (5) In step (4), the thickness of the inorganic oxide layer 41 is 24nm, and the structure is Al2O3(4nm) / TiO2(4nm) / Al2O3(4nm) / TiO2(4nm) / Al2O3(4nm) / TiO2(4nm) / .

[0039] (6) A buffer layer 42 is spin-coated on the inorganic oxide layer 41 .

[0040] (7) In step (6), the buffer layer 42 is polysiloxane with a thickness of 1 μm.

[0041] (8) Steps (4) and (6) are repeated three ti...

Embodiment 2

[0046] Such as figure 1 Shown:

[0047] A thin film encapsulation structure of an organic electroluminescent device, which is prepared by the following method:

[0048] (1) A top-emitting OLED device 2 is formed on a silicon substrate 1 by a thermal evaporation method.

[0049] (2) Prepare the light layer 3 on the cathode of the OLED device by thermal evaporation.

[0050] (3) In step (2), the light emitting layer is composed of SiO and SiOx. Wherein, SiO has a thickness of 20 nm and a refractive index of 1.67; SiOx has a thickness of 20 nm and a refractive index of 1.6.

[0051] (4) ALD is used to deposit an inorganic oxide layer 41 on the light-extracting layer 3 .

[0052] (5) In step (4), the thickness of the inorganic oxide layer 41 is 30nm, and the material is Al 2 o 3 , the refractive index is 1.57.

[0053] (6) A buffer layer 42 is spin-coated on the inorganic oxide layer 41 .

[0054] (7) In step (6), the buffer layer 42 is polysiloxane with a thickness of 600...

Embodiment 3

[0060] Such as figure 1 Shown:

[0061] A thin-film encapsulation structure of an organic electroluminescence device, which is prepared through the following steps:

[0062] (1) A top-emitting OLED device 2 is formed on a glass substrate 1 by a thermal evaporation method.

[0063] (2) Prepare the light layer 3 on the cathode of the OLED device by thermal evaporation.

[0064] (3) In step (2), the thickness of the light emitting layer is 40nm, the refractive index is 1.65, and the material is SiO.

[0065] (4) ALD is used to deposit an inorganic oxide layer 41 on the light-extracting layer 3 .

[0066](5) In step (4), the thickness of the inorganic oxide layer 41 is 50nm, and the structure is Al2O3(5nm) / ZrO2(5nm) / Al2O3(5nm) / ZrO2(5nm) / Al2O3(5nm) / ZrO2(5nm) / Al2O3(5nm) / ZrO2(5nm) / Al2O3(5nm) / ZrO2(5nm) / .

[0067] (6) A layer of buffer layer 42 is scraped on the inorganic oxide layer 41 using a scraper coating technique.

[0068] (7) In step (6), the buffer layer 42 is polysilox...

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Abstract

The invention discloses a thin film encapsulation structure and method of an organic electroluminescence device, belonging to the field of organic electroluminescence. The structure of the electroluminescence device includes: forming a layer of light output layer on the cathode of the OLED device to be packaged, forming a layer of thin film encapsulation layer on the light output layer, and covering the thin film encapsulation layer with adhesive and glass cover plate to form the device. The invention also discloses a manufacturing method of the encapsulation structure: the light emitting layer is composed of silicon oxide, the thin film encapsulation layer is composed of inorganic oxide film and polysiloxane, and the encapsulation surface glue is mainly composed of polysiloxane , epoxy or acrylic. Through the technical solution of the invention, the light extraction efficiency and the water and oxygen barrier ability of the organic electroluminescent device are effectively improved, and the service life of the device is increased.

Description

technical field [0001] The invention relates to the field of packaging of OLED devices, in particular to a packaging structure of an organic electroluminescent device, in particular to a thin film packaging structure and a preparation method of an organic electroluminescent device. Background technique [0002] Organic electroluminescent devices, also known as organic electroluminescent diodes (OLEDs), are a new self-luminous display technology. OLED devices have the advantages of high brightness, full viewing angle, fast response, and flexibility, and have been widely used in the display industry. Especially in recent years, with the popularity of OLED mobile phone displays, OLED displays have entered the field of mass consumption. At present, OLED has entered the industrialization stage from the research stage. [0003] The metal electrodes of OLED devices are relatively active, and are easily polluted by water and oxygen in the air, causing black spots on the device, wh...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/52H01L51/56
CPCH10K50/8445H10K50/8426H10K2102/3026H10K71/00
Inventor 杨建兵张阳王绪丰
Owner NANJING GUOZHAO OPTOELECTRONICS TECH CO LTD
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