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Preparation method for frequency-reconfigurable sleeve dipole antenna of Ge heterojunction SPiN diode

A dipole antenna and diode technology, which is applied in the field of Ge heterogeneous SPiN diode frequency reconfigurable sleeve dipole antenna preparation, can solve problems such as difficult to meet various system requirements and application environments, and achieve small size and easy processing , The effect of rapid frequency jump

Inactive Publication Date: 2017-06-13
XIAN CREATION KEJI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At the same time, in order to break through the fixed performance of traditional antennas that are difficult to meet diverse system requirements and complex and changeable application environments, the concept of reconfigurable antennas has been valued and developed.

Method used

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  • Preparation method for frequency-reconfigurable sleeve dipole antenna of Ge heterojunction SPiN diode
  • Preparation method for frequency-reconfigurable sleeve dipole antenna of Ge heterojunction SPiN diode
  • Preparation method for frequency-reconfigurable sleeve dipole antenna of Ge heterojunction SPiN diode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055]See figure 1 , figure 1 A structural schematic diagram of a Ge heterogeneous SPiN diode frequency reconfigurable sleeve dipole antenna provided by an embodiment of the present invention. The antenna includes GeOI substrate 1, SPiN diode antenna arm 2, first SPiN diode sleeve 3, second SPiN diode sleeve 4, coaxial feeder 5, DC bias lines 9, 10, 11, 12, 13, 14 , 15, 16, 17, 18, 19; among them,

[0056] The SPiN diode antenna arm 2, the first SPiN diode sleeve 3, the second SPiN diode sleeve 4, and the DC bias lines 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, and 19 are all fabricated on the GeOI substrate 1; the SPiN diode antenna arm 2, the first SPiN diode sleeve 3 and the second SPiN diode sleeve 4 pass through the coaxial feeder 5 connection, the inner core wire 7 of the coaxial feeder 5 is connected to the SPiN diode antenna arm 2 and the outer conductor 8 of the coaxial feeder 5 is connected to the first SPiN diode sleeve 3 and the second SPiN diode sleeve cartridge 4...

Embodiment 2

[0077] See image 3 , image 3 A schematic diagram of a method for fabricating a lateral SPiN diode provided by an embodiment of the present invention. The preparation method may comprise the steps of:

[0078] (a) setting an isolation region on the GeOI substrate according to the structure of the sleeve dipole antenna;

[0079] (b) etching the GeOI substrate to form a P-type trench and an N-type trench, and the depth of the P-type trench and the N-type trench is less than the thickness of the top layer Ge of the GeOI substrate;

[0080] (c) filling the P-type trench and the N-type trench, and forming a P-type active region and an N-type active region in the P-type trench and the N-type trench by using an ion implantation process ;as well as

[0081] (d) forming leads on the GeOI substrate to form the lateral SPiN diode.

[0082] Wherein, step (a) may include:

[0083] (a1) forming a first protective layer on the surface of the GeOI substrate;

[0084] (a2) forming a fi...

Embodiment 3

[0106] See Figure 6a-Figure 6r , Figure 6a-Figure 6r It is a schematic diagram of a method for fabricating a lateral SPiN diode according to an embodiment of the present invention. In this embodiment, on the basis of the above-mentioned embodiments, the preparation of the SPiN diode is described in detail by taking the preparation of a GaAs-based SPiN diode (solid-state plasma PiN diode) with a plasma region length of 100 μm as an example, and the specific steps are as follows:

[0107] On the basis of the above-mentioned embodiment 1, the preparation of a heterogeneous Ge-based solid-state plasma pin diode with a channel length of 22 nm (the length of the solid-state plasma region is 100 microns) is taken as an example to describe in detail, and the specific steps are as follows:

[0108] Step 1, substrate material preparation steps:

[0109] (1a) if Figure 6a As shown, the (100) crystal orientation is selected, the doping type is p-type, the doping concentration is a G...

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Abstract

The invention relates to preparation method of a frequency-reconfigurable sleeve dipole antenna of a Ge heterojunction SPiN diode. The method comprises the steps of fabricating a plurality of transverse SPiN diodes on a GeOI substrate according to a structure of the sleeve dipole antenna, wherein a P region of each transverse SPiN diode employs a Si material, an i region of each transverse SPiN diode employs a Ge material, and an N region of each transverse SPiN diode employs a Si material to form a heterojunction Ge-Based SPiN diode; photoetching PAD on the plurality of transverse SPiN diodes to achieve series connection of the plurality of transverse SPiN diodes so as to form a plurality of SPiN diode strings; fabricating a DC bias line to connect the SPiN diode strings and a DC bias power supply; fabricating an antenna arm and a sleeve by the plurality of SPiN diode strings; and fabricating a coaxial feeding line to connect the antenna arm and the sleeve, and finally, forming the sleeve dipole antenna. In the sleeve dipole antenna, the conduction of the SPiN diode is controlled by the metal DC bias line, the length-adjustable plasma antenna arm and the sleeve are formed, so that the reconfiguration of a working frequency of the antenna is achieved, the sleeve dipole antenna has the characteristics that the sleeve dipole antenna is easy to integrate and can be hidden, and the frequency can be rapidly jumped.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a method for preparing a Ge heterogeneous SPiN diode frequency reconfigurable sleeve dipole antenna. Background technique [0002] Today, with the rapid development of antenna technology, the traditional sleeve monopole antenna is widely used in vehicle, shipboard and remote sensing due to its wide frequency band, high gain, simple structure, easy feeding, longitudinal size, omnidirectional and many other advantages. and other communication systems. However, the electrical characteristics of the commonly used sleeve monopole antenna not only depend on the sleeve structure, but also have a great relationship with the ground, which makes it difficult to meet the requirements of broadband and miniaturization for elevated antennas in shipboard communication engineering . [0003] The sleeve dipole antenna is a dipole antenna formed by adding a coaxial metal sleev...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01Q23/00H01Q1/22H01Q1/50H01Q1/36H01Q5/321
CPCH01Q23/00H01Q1/2283H01Q1/36H01Q1/50H01Q5/321
Inventor 张亮左瑜
Owner XIAN CREATION KEJI CO LTD
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