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Screening testing method for diode reverse characteristic and application thereof

A technology of reverse characteristics and testing methods, which is applied in the direction of single semiconductor device testing, measuring electricity, measuring devices, etc., can solve the problems of unsuitable diodes, etc., and achieve the effect of improving reliability and improving factory quality

Inactive Publication Date: 2017-06-09
JILIN MAGIC SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] The purpose of the present invention is to provide a diode reverse characteristic screening test method, which is used to screen diodes with a small segment line problem at the breakdown point, so as to solve the problem that the existing test method is not applicable to the above-mentioned defective diodes

Method used

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  • Screening testing method for diode reverse characteristic and application thereof
  • Screening testing method for diode reverse characteristic and application thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0057] The diode reverse characteristic screening test method of the present embodiment comprises the following steps:

[0058] 1) Apply a reverse current of 1mA on both sides of the diode to test the breakdown voltage;

[0059] 2) Select the 95% breakdown voltage value and 99.5% breakdown voltage value, and test the leakage current under these two voltage values, which are recorded as IR1 and IR2 respectively;

[0060] 3) Calculate the ratio of IR1 and IR2.

Embodiment 2

[0062] The test steps and data provided in Example 1 were used to repeat the test 10 times.

Embodiment 3

[0064] The diode reverse characteristic screening test method of the present embodiment comprises the following steps:

[0065] 1) Apply a reverse current of 2mA on both sides of the diode to test the breakdown voltage;

[0066] 2) Select the 96% breakdown voltage value and 99% breakdown voltage value, and test the leakage current under these two voltage values, which are recorded as IR1 and IR2 respectively;

[0067] 3) Calculate the ratio of IR1 and IR2.

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Abstract

The invention provides a screening testing method for a diode reverse characteristic and an application thereof, wherein the method relates to the field of semiconductor device testing technology. The screening testing method for the diode reverse characteristic comprises the following steps of 1), testing a breakdown voltage; 2), selecting two voltages in a range of 95%-99.5% of the breakdown voltage, testing leakage currents on the condition of the two voltages, respectively recording the two leakage currents as IR1 and IR2; and 3), calculating a ratio between the IR1 and the IR2, and determining whether the diode reverse characteristic is qualified according to the ratio. The testing method is used for screening the diode with a problem of small segmenting line at a breakdown point, thereby settling a problem of inapplicability of an existing testing method to the defective diode, improving quality of the diode after leaving a factory, and improving diode reliability.

Description

technical field [0001] The invention relates to the technical field of semiconductor device testing, in particular to a diode reverse characteristic screening testing method and its application. Background technique [0002] The most important characteristic of a diode is unidirectional conductivity. In the circuit, current can only flow in from the positive terminal of the diode and flow out from the negative terminal. The forward and reverse characteristics of the diode will be briefly described below. [0003] 1) Positive characteristics [0004] In an electronic circuit, if the anode of a diode is connected to the high potential end and the negative electrode is connected to the low potential end, the diode will conduct. This connection method is called forward bias. It must be noted that when the forward voltage applied across the diode is very small, the diode still cannot conduct, and the forward current flowing through the diode is very weak. Only when the forwar...

Claims

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Application Information

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IPC IPC(8): G01R31/26
CPCG01R31/2601
Inventor 马志勇孔玲娜田振兴张树宝王斌孟鹤王品东
Owner JILIN MAGIC SEMICON
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