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A semiconductor optical amplifier

An optical amplifier and semiconductor technology, applied to semiconductor lasers, lasers, laser components, etc., can solve the problems of inability to realize miniaturization, small mode volume, low optical gain saturation optical output power, etc., and achieve increased photon density and improved mode The effect of volume, compression divergence angle

Active Publication Date: 2019-12-10
CHANGCHUN UNIV OF SCI & TECH
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Problems solved by technology

At present, semiconductor optical amplifiers have problems such as small mode volume, low optical gain, and low saturated optical output power. Using an array of multiple straight waveguide semiconductor optical amplifiers, the power can be increased through photopolymerization, but this structure requires external optical components. Photopolymerization cannot meet miniaturization requirements

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  • A semiconductor optical amplifier

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Embodiment Construction

[0008] The technical solutions of the present invention will be further described in detail below through the accompanying drawings and embodiments.

[0009] The present invention provides a GaAs-based semiconductor optical amplifier with a parabolic curved waveguide. The semiconductor optical amplifier structure consists of a substrate, an N-type buffer layer, an N-type lower confinement layer, an N-type lower waveguide layer, a quantum well active region, The P-type upper waveguide layer and the P-type upper confinement layer are formed, wherein the P-type waveguide layer is a parabolic curved surface structure, and the following is an N-type GaAs substrate, N-type Al x Ga 1- x As buffer layer, N-type AlGaAsSb lower confinement layer, N-type Al x Ga 1-x As lower waveguide layer, In x Ga 1-x As quantum well active region, P-type Al x Ga 1-x The semiconductor optical amplifier with the waveguide layer on the As parabolic curved surface structure and the confinement laye...

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Abstract

The invention discloses a semiconductor optical amplifier, and especially relates to a GaAs-based semiconductor optical amplifier having a parabola-shaped curved-surface waveguide structure. Material of the semiconductor optical amplifier is a GaAs-based material system. An N-type AlxGa1-xAs buffer layer, an N-type AlGaAsSb lower limit layer, an N-type N-AlxGa1-xAs lower waveguide layer, an InxGa1-xAs quantum well active region, a P-type AlxGa1-xAs upper waveguide layer and a P-type AlGaAsSb upper limit layer are epitaxially prepared on an N-type GaAs substrate in sequence. The upper waveguide layer of the semiconductor optical amplifier is in the parabola-shaped curved-surface structure; such structure can enable a parabola-shaped curved-surface tip to have higher photon density, thereby improving mode volume of the semiconductor optical amplifier and enabling the semiconductor optical amplifier to have higher gain; and meanwhile, the parabola-shaped curved-surface waveguide structure facilitates compressing divergence angle of the semiconductor optical amplifier, thereby realizing high-power output and improving fiber coupling efficiency. The parabola-shaped curved-surface structure of the upper waveguide layer of the semiconductor optical amplifier is prepared through electron beam lithography or ultra-violet lithography, and then, through a dry method and wet method combined etching process.

Description

technical field [0001] The invention relates to the field of semiconductor optical amplifiers, in particular to a GaAs-based semiconductor optical amplifier with a parabolic curved surface waveguide structure. Background technique [0002] Semiconductor optical amplifier is an optoelectronic device that uses semiconductor material as gain medium and can amplify or provide gain to external photons. The device has the advantages of hybrid or monolithic integration and mature manufacturing process. Semiconductor optical amplifier is an important device for realizing all-optical signal processing and compensating optical loss in the future all-optical network. It has a wide range of applications in optical communication systems. It can also be used as a non-linear device for optical signal processing modules such as optical switches and wavelength converters. [0003] With the development of optical communication technology, there are higher requirements for the output power, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/323H01S5/343
CPCH01S5/323H01S5/343
Inventor 魏志鹏唐吉龙贾慧民方铉张晶郝永芹王菲马晓辉王晓华
Owner CHANGCHUN UNIV OF SCI & TECH
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