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Unstable cavity semiconductor laser and preparation method thereof

A technology of lasers and semiconductors, applied in the direction of semiconductor lasers, lasers, laser components, etc., can solve the problems of increasing device cost and process complexity, difficult to achieve promotion, etc., and achieve high power output, stable distribution, and increased mode volume Effect

Active Publication Date: 2021-12-14
CHANGCHUN UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, the current manufacturing process of unstable cavity semiconductor lasers involves complex curved cavity surface processes, such as side polishing, deep etching, ion beam milling, ion milling, etc., which increases the cost and process complexity of the device, making it difficult to achieve popularization

Method used

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  • Unstable cavity semiconductor laser and preparation method thereof
  • Unstable cavity semiconductor laser and preparation method thereof
  • Unstable cavity semiconductor laser and preparation method thereof

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Embodiment Construction

[0034] Hereinafter, specific embodiments of the present application will be described in detail with reference to the accompanying drawings. According to these detailed descriptions, those skilled in the art can clearly understand the present application and can implement the present application. Without departing from the principle of the present application, the features in different embodiments can be combined to obtain new implementations, or some features in certain embodiments can be replaced to obtain other preferred implementations.

[0035] In this application, the first curved grating 3 , the second curved grating 6 , the third curved grating 11 and the fourth curved grating 12 are respectively described as first, second, third and fourth in order to distinguish them. It can be referred to as a curved grating for short.

[0036] Likewise, the first etching groove, the second etching groove and the third etching groove can all be referred to as etching grooves for sho...

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Abstract

The invention belongs to the technical field of semiconductor lasers, and particularly relates to an unstable cavity semiconductor laser and a preparation method thereof. The current manufacturing process of an unstable cavity semiconductor laser relates to a complex curve cavity surface process, so that the device cost and the process complexity are increased, and the popularization is difficult to realize. The unstable cavity semiconductor laser comprises a first cavity surface film, a laser epitaxial structure and a second cavity surface film which are arranged in sequence, and the laser epitaxial structure is provided with a curve grating, a deep etching groove, an irregular quadrilateral electrode area and a conical electrode area. The curve grating and the second cavity surface film form an unstable resonant cavity, a laser output mechanism based on a lateral leakage mode is formed, the utilization rate of a laser gain medium is improved, and space hole burning and light filaments are restrained. The special arrangement of the grating structure and the area enables the laser passing through the conical area to be overlapped to form a combined beam, thereby facilitating the improvement of the quality of the light beam, and achieving the single-tube dual-wavelength output of the laser.

Description

technical field [0001] The application belongs to the technical field of semiconductor lasers, in particular to an unstable cavity semiconductor laser and a preparation method thereof. Background technique [0002] The current unstable cavity semiconductor laser is a semiconductor laser based on a special waveguide or curved cavity surface structure to realize the lateral or lateral expansion of the laser resonant region, which overcomes the poor beam quality of the traditional stable cavity laser, which is easy to burn space and easy Inherent disadvantages such as optical filaments have achieved significant advantages such as single transverse mode, near-diffraction-limited light output, and high coherence. [0003] In the existing related research, there are mainly four structures that form the working mechanism of the unstable cavity: curved end face, lateral refractive index anti-waveguide, curved grating coupler and special microstructure. In comparison, the former two...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/10H01S5/028H01S5/068
CPCH01S5/1089H01S5/0287H01S5/068
Inventor 邹永刚田锟范杰石琳琳张贺王海珠兰云萍徐英添马晓辉金亮徐睿良
Owner CHANGCHUN UNIV OF SCI & TECH
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