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An epitaxial growth method for improving the quality of light-emitting diodes

A technology of light-emitting diodes and epitaxial growth, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of high stress on the light-emitting layer and low luminous efficiency of the light-emitting layer, achieve stress relief, improve electrical parameters and light efficiency, improve The effect of LED quality

Active Publication Date: 2019-01-25
XIANGNENG HUALEI OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0017] In view of this, the present invention provides an epitaxial growth method for improving the quality of light-emitting diodes, which solves the technical problem in the prior art that the luminous efficiency of the light-emitting layer is not high due to the high stress of the light-emitting layer

Method used

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  • An epitaxial growth method for improving the quality of light-emitting diodes
  • An epitaxial growth method for improving the quality of light-emitting diodes
  • An epitaxial growth method for improving the quality of light-emitting diodes

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Embodiment 1

[0062] Such as Figure 4 As shown, it is a schematic structural diagram of the light-emitting diode described in the embodiment of the present invention. The structure of the light-emitting diode described in the present embodiment includes: the substrate sapphire Al 2 o 3 Layer 401, low temperature buffer layer GaN layer 402, undoped GaN layer 403, Si-doped GaN layer 404, stress release layer 405 (including: SiInN layer 451, SiInGaN layer 452), light emitting layer 406 (including: In x Ga (1-x) N layer 461, GaN layer 462), P-type AlGaN layer 407, Mg-doped P-type GaN layer 408, ITO layer 409, SiO 2 protective layer 410 , P electrode 411 , and N electrode 412 .

[0063] image 3 It is a schematic flow chart of the epitaxial growth method for improving the quality of light-emitting diodes described in this embodiment; the method described in this embodiment solves the technical problem of low luminous efficiency of the light-emitting layer caused by high stress in the light-...

Embodiment 2

[0077] Figure 6 It is a schematic flow chart of the epitaxial growth method for improving the quality of light-emitting diodes described in the embodiment of the present invention; this embodiment further describes the epitaxial growth method of light-emitting diodes on the basis of embodiment 1. The epitaxial growth method for improving the quality of light-emitting diodes described in this embodiment includes the following steps:

[0078] Step 601, at a temperature of 1000-1100°C, inject 100L / min-130L / min of H 2 1. The sapphire substrate is processed for 8-10 minutes under the condition that the pressure of the reaction chamber is kept at 100-300 mbar.

[0079] Step 602, lower the temperature to 500-600°C, keep the reaction chamber pressure at 300-600mbar, and feed NH at a flow rate of 10000-20000sccm 3 , 50-100sccm TMGa, 100L / min-130L / min H 2 , grow a low-temperature buffer GaN layer with a thickness of 20-40nm on a sapphire substrate.

[0080] Step 603, raise the temp...

Embodiment 3

[0094] The application examples of the epitaxial growth method for improving the quality of light-emitting diodes of the present invention are provided below, and a comparison test is carried out between the prior art preparation method of LED and the preparation method of the above-mentioned examples, as shown in Table 1:

[0095] Sample 1 is an LED prepared by the prior art, and the preparation process is as follows figure 1 Shown; Sample 2 is the LED prepared by this patented technology, and the preparation process is as follows image 3 As shown; the difference between the sample 1 and sample 2 light-emitting diode epitaxial growth methods lies in: the growth conditions of the light-emitting layer are different. The comparison experiment of sample 1 and sample 2's photoelectric performance is as follows: Figure 5 As shown, the steps are as follows:

[0096] In step 501, take three LED samples of the prior art LED sample 1 and the LED sample 2 of the inventive technolog...

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Abstract

The invention discloses an epitaxial growth method for improving quality of an LED. The epitaxial growth method comprises the steps of processing a sapphire substrate, growing low temperature GaN buffer layers, growing undoped GaN layers, growing Si-doped N-type GaN layers, growing stress release layers, growing InxGa(1-x)N / GaN light-emitting layers, growing P-type AlGaN layers, growing Mg-doped P-type GaN layers, and cooling to obtain the LED; the epitaxial growth method for improving the quality of the LED solves the problem that the stress in the light-emitting layer is too large which leads to low luminous efficiency.

Description

technical field [0001] The invention relates to the technical field of semiconductors, and more specifically, to an epitaxial growth method for improving the quality of light-emitting diodes. Background technique [0002] The annual power consumption of industrial and household lighting cannot be underestimated, and it has become a major burden on the national power system. In response to the national call for energy conservation and emission reduction, users are more inclined to choose energy-saving lighting equipment. Among them, light-emitting diode (light emitting diode, LED) solid-state lighting is trusted by consumers because of its small size, long service life, high brightness, energy saving, environmental protection, and durability. With the rapid development of science and technology, the production scale of domestic LEDs is gradually expanding, and the quality of LED market demand is getting higher and higher. Among them, the driving voltage and brightness require...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/04
CPCH01L33/0066H01L33/0075H01L33/04
Inventor 徐平
Owner XIANGNENG HUALEI OPTOELECTRONICS
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