A weavable fiber-based transistor glucose sensor and its preparation method
A glucose sensor and transistor technology, applied in the field of sensors, can solve the problems of inconvenient carrying of glucose sensors, inability to realize portability and real-time monitoring of human glucose, and achieve good linear response, high accuracy, and good flexibility
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Embodiment 1
[0057] A method for preparing a weavable fiber-based transistor glucose sensor, comprising the following steps:
[0058] 1) Preparation of source-drain electrodes of organic electrochemical transistors:
[0059] Put 1.2g of pyrrole into 100ml, 0.39mM 5-sulfosalicylic acid dihydrate solution to obtain a mixed solution, soak the nylon filament in the mixed solution under the condition of ice bath at 0°C, and drop 100ml, 0.42 mM ferric nitrate nonahydrate solution, stirred at 300r / min, and took out the nylon filament after reacting for 1h to obtain the source-drain electrode of nylon / polypyrrole;
[0060] 2) Prepare the gate of the organic electrochemical transistor:
[0061] Soak the source-drain electrode obtained in step 1) in a 1 mg / mL glucose oxidase solution for 24 hours at 0°C, take it out, then soak it in a 5wt% perfluorosulfonic acid solution at 0°C, and take it out to obtain a gate;
[0062] 3) Transistor assembly:
[0063] The obtained source-drain electrodes and ga...
Embodiment 2
[0066] 1) Preparation of source-drain electrodes of organic electrochemical transistors:
[0067] Put 1g of aniline into 100ml, 10mM sulfuric acid solution to obtain a mixed solution, soak the cotton thread in the mixed solution under the condition of ice bath at 0°C, add dropwise 100ml, 1mM ferric chloride solution to the mixed solution, stir at 900r / min, and react After 2h, take out the cotton thread to obtain the source-drain electrode of cotton thread / polyaniline;
[0068] 2) Prepare the gate of the organic electrochemical transistor:
[0069] Soak the source-drain electrode obtained in step 1) in a 10 mg / mL glucose oxidase solution at 0°C for 20 hours, take it out, then soak it in a 2wt% perfluorosulfonic acid solution at 0°C for 20 hours, and take it out to obtain a gate;
[0070] 3) Transistor assembly:
[0071] The obtained source-drain electrodes and gates are combined in a plain weave structure, the source-drain electrodes intersect with the gate crosses, and a gel...
Embodiment 3
[0074] 1) Preparation of source-drain electrodes of organic electrochemical transistors:
[0075] Put 2g of pyrrole into 100ml, 3mM hydrochloric acid solution to obtain a mixed solution, soak the polyester yarn in the mixed solution under ice bath conditions at 0°C, and add 100ml, 0.74mM ammonium persulfate solution dropwise to the mixed solution, and stir at 500r / min, After reacting for 3h, take out the polyester filament to obtain the source-drain electrode of polyester filament / polypyrrole;
[0076] 2) Prepare the gate of the organic electrochemical transistor:
[0077] Soak the source-drain electrode obtained in step 1) in a 5 mg / mL glucose oxidase solution at 0°C for 28 hours, take it out, then soak it in a 3wt% perfluorosulfonic acid solution at 0°C for 20 hours, and take it out to obtain a gate;
[0078] 3) Transistor assembly:
[0079] The obtained source-drain electrodes and gates are combined in a plain weave structure, the source-drain electrodes intersect with th...
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