LED vertical chip structure and manufacturing method thereof

Abstract

The invention provides an LED vertical chip structure and a manufacturing method thereof. The method comprises the following steps of S1, providing a sapphire substrate and growing an unintentionally-doped GaN layer, an N-type GaN layer, a multi-quantum well layer and a P-type GaN layer successively on the substrate; S2, forming several discrete P electrodes; S3, forming several discrete first bonding metal layers which cover the P electrodes; and providing a bonding substrate and forming several discrete second bonding metal layers on a surface of the bonding substrate; S4, carrying out alignment bonding on the first bonding metal layers and the second bonding metal layers; S5, removing the sapphire substrate; S6, removing the unintentionally-doped GaN layer, and using a dry method etching technology to form a cutting channel, wherein the cutting channel avoids an area where the bonding metal layers are located; and S7, forming an N electrode. In the invention, a graphical bonding structure (formed by several discrete bonding metal layers) is adopted so that a metal splashing problem generated when ICP etches the cutting channel is effectively avoided; and a chip electric leakage risk is reduced so that chip reliability is effectively increased.

Description

technical field [0001] The invention belongs to the field of LED chips, and relates to an LED vertical chip structure and a manufacturing method thereof. Background technique [0002] A light emitting diode (Light Emitting Diode, referred to as LED) is a semiconductor light emitting device, which is made by using the principle of semiconductor P-N junction electroluminescence. LED has low energy consumption, small size, long life, good stability, fast response, stable light-emitting wavelength and other good photoelectric properties. It has been widely used in lighting, home appliances, display screens, indicator lights and other fields. [0003] The gallium nitride (GaN) material series is an ideal short-wavelength light-emitting device material. The band gap of gallium nitride and its alloys covers the spectral range from red to ultraviolet. Since Japan developed homojunction gallium nitride blue LED in 1991, InGaN / AlGaN double heterojunction ultra-brightness blue LED and...

AI Technical Summary

Problems solved by technology

[0008] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a LED vertical chip structure and its manufacturing method, which is used to solve the problem of dry-processing the chip dicing line after the substrate is peeled off in the prior art vertical structure LED manufacturing process. During deep etching, the metal layer below the epitaxial layer is easily splashed by the plasma, which will cause contamination of the side wall of the chip, cause leakage, and affect the reliability of the chip.

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