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II type superlattice photoelectric detector possessing absorption enhancement structure and manufacturing method thereof

A technology of photodetector and enhanced structure, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of high quantum efficiency, low detection accuracy, difficult to achieve, etc., to improve quantum efficiency, improve effective quality, increase overlap Effect

Active Publication Date: 2017-05-17
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the existing type II superlattice devices are difficult to achieve high quantum efficiency and narrow bandwidth, which makes the detection accuracy low

Method used

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  • II type superlattice photoelectric detector possessing absorption enhancement structure and manufacturing method thereof
  • II type superlattice photoelectric detector possessing absorption enhancement structure and manufacturing method thereof
  • II type superlattice photoelectric detector possessing absorption enhancement structure and manufacturing method thereof

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preparation example Construction

[0029] One aspect of the present invention discloses a method for preparing a class II superlattice photodetector with an absorption-enhancing structure, comprising the following steps:

[0030] Step 1, forming an absorption enhancement layer on the substrate, the absorption enhancement layer is a periodic arrangement structure capable of promoting absorption enhancement;

[0031] Step 2, forming an absorbing layer on the upper surface of the absorbing enhancement layer, the absorbing layer is a type II superlattice structure;

[0032] Step 3, completing the preparation of the type II superlattice photodetector with an absorption-enhancing structure.

[0033] The absorption layer includes a p-type II superlattice layer and an n-type II superlattice layer, which are sequentially grown by molecular beam epitaxy; the p-type II superlattice layer and the n-type II superlattice layer It can be prepared by using InAs / GaSb II superlattice material, M structure II superlattice materi...

Embodiment

[0049] Such as figure 1 As shown, the present embodiment proposes a method for preparing a class II superlattice photodetector with an absorption-enhancing structure, comprising the following steps:

[0050] Step 1, Molecular beam epitaxial growth on the semiconductor substrate 7 to form a GaSb buffer layer 6 and an AlAs 0.09 Sb 0.91 / GaSb absorption enhancement layer 5;

[0051] Step 2, in AlAs 0.09 Sb 0.91 Molecular beam epitaxial growth on the upper surface of the GaSb absorption enhancement layer 5 forms an absorption layer, which includes a p-type II type superlattice layer 4 and an n-type II type superlattice layer 3, and the absorbed material composition It is an N structure InAs / AlSb / GaSb type II superlattice material, where each period is composed of 8ML of InAs, 2ML of AlSb and 9ML of GaSb;

[0052] Step 3, forming an InAs cap layer by epitaxial growth on the upper surface of the n-type II superlattice layer 3 in the absorbing layer, and completing the preparati...

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Abstract

An II type superlattice photoelectric detector possessing an absorption enhancement structure and a manufacturing method thereof are disclosed. The manufacturing method comprises the following steps of carrying out molecular-beam epitaxial growth on a substrate so as to form an absorption enhancement layer; carrying out molecular-beam epitaxial growth on an upper surface of the absorption enhancement layer so as to form an absorption layer, wherein the absorption layer is an N structure II type superlattice structure; and completing manufacturing of the II type superlattice photoelectric detector possessing the absorption enhancement structure. In the invention, through adopting an N structure II type superlattice material as the absorption layer and simultaneously introducing the absorption enhancement layer, a device can acquire 80% of high quantum efficiency at a target wave length position and a good narrow bandwidth characteristic is embodied nearby a target wave length.

Description

technical field [0001] The invention relates to a semiconductor optoelectronic device, in particular to a class II superlattice photodetector with an absorption enhancement structure and a preparation method thereof. Background technique [0002] With the advancement of science and technology, the demand for photoelectric detectors in various fields is increasing, such as target recognition, guidance, auxiliary medical treatment, meteorological monitoring, environmental monitoring and earth resource detection in harsh environments such as strategic early warning and night vision. At present, the most widely used detectors such as HgCdTe still have the disadvantages of high cost and poor uniformity, which makes the research and development of a new generation of photodetectors imminent. Due to its material characteristics, the light absorption coefficient of type II superlattice detectors can be compared with that of HgCdTe; its 0.61nm material system can bring sufficient des...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0352H01L31/18
CPCH01L31/035236H01L31/18Y02P70/50
Inventor 宋国峰吴浩越李健江宇于海龙付东徐云朱海军
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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