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Production method of thin film transistor and array substrate

A technology of thin film transistors and manufacturing methods, applied in the manufacture of array substrates and thin film transistors, and in the field of thin film transistors, can solve problems such as thin film transistor defects, abnormal operation of thin film transistors, and burnout, and achieve the effect of reducing the probability of burnout

Inactive Publication Date: 2017-05-17
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the process of manufacturing and using display devices, they are usually affected by static electricity, and the influence of static electricity will cause the thin film transistors of the display devices to form defects or even burn out, causing the thin film transistors to work abnormally.

Method used

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  • Production method of thin film transistor and array substrate
  • Production method of thin film transistor and array substrate
  • Production method of thin film transistor and array substrate

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Embodiment Construction

[0041] The implementation process of the embodiment of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be noted that the same or similar reference numerals represent the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0042] see figure 1 , the embodiment of the present application provides a thin film transistor, including:

[0043] A conductive buried layer 31 disposed on the base substrate 1, and a resistance isolation layer 32 disposed on the conductive buried layer 31;

[0044] The active layer 331 arranged on the resistance isolation layer 32, the source electrode 332 arranged on one side of the active layer 331, and the drain electrode 333 arranged on the other side of the active layer 331,...

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Abstract

The application embodiment provides a production Method of thin film transistor and array substrate to reduce the probability of the thin film transistor's abnormal operation due to electrostatic interactions. The thin film transistor comprises a conductive buried layer on substrate, an insulation resistance on the conductive buried layer, an active layer on insulation resistance, a source on a side of the active layer and a drain on the other side, and a grid insulator on the active layer and a grid on the grid insulator. An electrode is set for connecting the drain and the conductive buried layer in the place where the insulation resistance is set. The specific resistance of connecting electrode is lower than that of other area of the insulation resistance.

Description

technical field [0001] The present application relates to the display field, in particular to a thin film transistor, an array substrate and a method for manufacturing the thin film transistor. Background technique [0002] Current display types mainly include liquid crystal display (Liquid Crystal Display, LCD), organic light-emitting diode display (Organic Light-Emitting Diode, OLED), plasma display (Plasma Display Panel, PDP) and electronic ink display. Among them, LCD liquid crystal display has the characteristics of long life, high luminous efficiency, low radiation, and low power consumption. It has gradually replaced traditional ray tube display devices and has become the mainstream product in display devices in recent years. OLED displays are recognized by the industry as the third-generation display technology after LCD displays due to their thinness, active light emission, fast response speed, wide viewing angle, rich colors, high brightness, low power consumption,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/60H01L29/786H01L21/336
CPCH01L29/78675H01L23/60H01L29/66757
Inventor 秦心宇
Owner BOE TECH GRP CO LTD
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