Magnetic-pole-assisted unbalanced magnetic control sputtering device

Abstract

The invention provides a magnetic-pole-assisted unbalanced magnetic control sputtering device which comprises a vacuum chamber, unbalanced magnetic control electrodes, assisting magnetic poles and a substrate bearing frame. The substrate bearing frame is arranged on the lower side of the vacuum chamber, the unbalanced magnetic control electrodes are arranged at the center of the upper side of the vacuum chamber, and the assisting magnetic poles are arranged on the two sides of the unbalanced magnetic control electrodes; or the unbalanced magnetic control electrodes are uniformly distributed on the same circumference with the center of the upper side of the vacuum chamber as the circle center, and the assisting magnetic poles are uniformly distributed on contour lines of the inner wall of the vacuum chamber and/or arranged at the center of the upper side of the vacuum chamber; when an even number of the unbalanced magnetic control electrodes exist, the two sides of at least one pair of the unbalanced magnetic control electrodes which are arranged side by side are provided with the assisting magnetic poles; and when an odd number of the unbalanced magnetic control electrodes exist, the number of the assisting magnetic poles which are uniformly distributed on the contour lines of the inner wall of the vacuum chamber is equal to that of the unbalanced magnetic control electrodes. By means of the magnetic-pole-assisted unbalanced magnetic control sputtering device, informality of a deposited film in terms of the ingredient, the microstructure and thickness can be improved.

Description

technical field [0001] The invention belongs to the technical field of dense oxide film preparation, and in particular relates to a magnetic pole-assisted unbalanced magnetron sputtering device. Background technique [0002] Electrolyte films are important components in energy conversion devices. At present, the electrolyte film is generally prepared by traditional radio frequency sputtering method, but the prepared electrolyte film cannot meet the requirements of dense structure, which greatly limits the research and development of energy conversion devices. [0003] The traditional radio frequency sputtering device uses a planar balance magnetron electrode. In this way, the energy of the deposited material is low. On the interface where the film is thickened, the deposited atoms or atomic groups cannot fully diffuse, which leads to the deposition of thin films on the microstructure. There are many pores, and the thickness is not uniform, which cannot meet the requirements...

AI Technical Summary

Problems solved by technology

At present, the electrolyte film is generally prepared by traditional radio frequency sputtering method, but the prepared electrolyte film cannot meet the requirements of dense structure, which greatly limits the research and development of energy conversion devices.

[0003] The traditional radio frequency sputtering device uses a planar balance magnetron electrode. In this

Images