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Method for preparing micron-scale SnO square flakes

A micron-scale, square-shaped technology, applied in the direction of tin oxide, etc., can solve the problems of difficult cleaning and increase the production cost, and achieve the effect of uniform size, controllable shape and mild conditions

Active Publication Date: 2017-04-26
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, in the existing public literature reports, surfactants are often used as structure-directing agents when preparing SnO materials. Surfactants will increase the preparation cost, and at the same time, they will adhere to the surface of the sample, making it difficult to clean.

Method used

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  • Method for preparing micron-scale SnO square flakes
  • Method for preparing micron-scale SnO square flakes
  • Method for preparing micron-scale SnO square flakes

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] A kind of preparation method of micron SnO square plate material, this method is specifically: 4.5g stannous chloride dihydrate, 60mL water, 1.6g sodium hydroxide, 0.4g sodium chloride are placed in the beaker of 150mL, at room temperature The mixture was stirred at low temperature for 1 h, and then the obtained liquid was transferred to a hydrothermal reaction kettle, and reacted in an oven at 200° C. for 6 h. The product was centrifuged, washed three times with deionized water and absolute ethanol, and dried in a vacuum oven at 40°C for 6 hours to obtain a micron-sized SnO square sheet material.

[0021] Figure 1(a) and Figure 1(b) are SEM images of micron-sized SnO square sheet materials. It can be seen from the figure that the prepared SnO has a square sheet structure with uniform size and regular shape.

[0022] figure 2 It is the XRD picture of the micron-sized SnO square sheet material, and each peak position in the figure can correspond to the SnO standard pea...

Embodiment 2

[0024] A preparation method of a micron-scale SnO square sheet material, the method is specifically: 4g stannous chloride dihydrate, 80mL water, 1.42g sodium hydroxide, 0.5g sodium chloride are placed in a 150mL beaker, at room temperature After stirring for 1 h, the resulting liquid was transferred to a hydrothermal reactor, and reacted in an oven at 210° C. for 6 h. The product was centrifuged, washed three times with deionized water and absolute ethanol, and dried in a vacuum oven at 40°C for 6 hours to obtain a micron-sized SnO square sheet material.

Embodiment 3

[0026] A preparation method of a micron-scale SnO square sheet material, the method is specifically: 5g stannous chloride dihydrate, 70mL water, 1.8g sodium hydroxide, 0.7g sodium chloride are placed in a 150mL beaker, at room temperature After stirring for 1.5 h, the resulting liquid was transferred to a hydrothermal reactor, and reacted in an oven at 200° C. for 8 h. The product was centrifuged, washed three times with deionized water and absolute ethanol, and dried in a vacuum oven at 40°C for 6 hours to obtain a micron-sized SnO square sheet material.

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Abstract

The invention discloses a method for preparing micron-scale SnO square flakes. The micron-scale SnO square flaky material is successfully obtained by a hydrothermal method in a manner of adopting stannic chloride as a stannum source and separately adopting sodium hydroxide and sodium chloride as a complexant and a reaction regulator. The raw materials required for preparation are rich, the cost is low, and no waste is generated. The preparation process is simple, and the repeatability is good. As a functional matrix material, SnO has extensive application in the aspects of catalysts, reducers, glass industry, electrochemical energy storage and the like.

Description

technical field [0001] The invention belongs to the technical field of nanomaterial preparation, and in particular relates to a method for preparing a stannous oxide material with a micron-scale square shape. Background technique [0002] The binary compound SnO is a p-type semiconductor material with a wide bandgap (2.5-3.0eV). In the SnO material, the energy of the 5s orbital of Sn and the 2p orbital of oxygen are similar. This energy relationship makes the valence band in SnO The energy level of the top position is not completely occupied by oxygen atoms, which leads to the strong hole-conducting ability of SnO, and SnO semiconductor is considered as a potential transparent conductive oxide material (TCO). SnO also has an important application in electrochemical energy storage. It has good electrical conductivity, which is conducive to the rapid transport of electrons. It has been reported to have good electrochemical performance when used as an anode material for sodium-...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G19/02
CPCC01G19/02C01P2002/72C01P2004/03C01P2004/61
Inventor 王戈党蕊王芃刘欣刘丽萍高鸿毅董文钧
Owner UNIV OF SCI & TECH BEIJING
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