Solid power semiconductor field effect transistor structure

Abstract

The invention discloses a solid power semiconductor field effect transistor structure. Through special design, no any parasitic triode exists in the solid power semiconductor field effect transistor structure, thereby solving the problem that a device fails due to secondary breakdown or latching under transient conditions. The firmness of the device is enhanced.

Description

technical field [0001] The present invention discloses a structure of a power semiconductor device, and in particular relates to a solid power semiconductor field effect transistor structure. Background technique [0002] Power semiconductor switching devices are widely used in power electronic systems, such as switching power supplies and motor drives, etc. These applications usually require that these devices should have high robustness. Please see attached figure 1 , figure 1 Shown in is a cross-section of a prior art power semiconductor device structure, figure 1 Devices with a medium structure are commonly referred to as vertical double-diffused metal-oxide-semiconductor field-effect transistors (VDMOS). The bottommost part of the field effect transistor body 100 is the drain 123, and the top of the drain 123 is provided with n + The drain region 115, namely the heavily doped n-type drain region, is in the n + On top of the drain region 115 is provided n - Drift r...

AI Technical Summary

Problems solved by technology

At present, VDMOS has been widely used in electronic systems, however, there is always a parasitic bipolar junction transistor (i.e., a triode) composed of an n+ source region 111, a p-type body region 113 and an n-drift region 114 in this structure, and Activation of this parasitic transistor can lead to device failure under transient conditions that typically include (but are not limited to) avalanche operation, reverse recovery of the body diode, and cosmic radiation-induced single-event events, and these conditions typically cause Encountered in the application, since the parasitic triode exists in all VDMOS structures, the related faults can only be suppressed but not eliminated

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