Parameter extraction method for integrated gate commutated thyristor drive turn-off circuit and continuing current circuit

Abstract

A parameter extraction method for integrated gate commutated thyristor drive turn-off circuit and continuing current circuit. The method consists of the following steps: S1. analyzing running characteristics of the integrated gate commutated thyristor drive circuit and the continuing current circuit, proposing an equivalent circuit during the integrated gate commutated thyristor turn-off transient continuing current process; S2. according to the equivalent circuit obtained in S1, deducing voltage expressions of the integrated gate commutated thyristor in different states; S3, carrying out a unijunction transistor testing experiment of the integrated gate commutated thyristor, by virtue of a specific clamping voltage and experiment results of electric quantities of the integrated gate commutated thyristor and the continuing current circuit when current is turned off during the integrated gate commutated thyristor turn-off transient process, proposing the parameter extraction method for the integrated gate commutated thyristor drive turn-off circuit and continuing current circuit; and S4,for the integrated gate commutated thyristor, carrying out experiments on different voltage grades and the turn-off circuits, through processing of the different experiment results, determining parameter values of the integrated gate commutated thyristor drive turn-off circuit and continuing current circuit.

Description

technical field [0001] The invention relates to a method for extracting parameters of an integrated gate commutation thyristor driving shut-off circuit and a freewheeling circuit. Background technique [0002] The integrated gate commutated thyristor (IGCT) is composed of the core device gate commutated thyristor (gate commutated thyristor, GCT) and the integrated gate circuit. thyristor, GTO) as the basis, with the help of transparent anode, buffer layer structure and gate hard drive technology, the IGCT has more powerful switching characteristics, avoiding the coexistence of transistors and thyristors during the turn-off transient process of GTO, while inheriting Due to the high power processing capability of GTO, it has been widely concerned by researchers from all over the world, and the related research is extremely extensive, which has prompted its wide application in medium and high voltage converters and related equipment. The turn-off capability of the IGCT is clos...

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Problems solved by technology

The document "A Method to Extract the Accurate Junction Temperature of anIGCT During Conduction Using Gate–Cathode Voltage" focuses on extracting the junction temperature of the IGCT during operation by combining experiments and simulations. "Influence" only analyzes the influence of the IGCT anti-parallel diode on the IGCT turn-off process, and uses the experimental results to show that the influence does exist, but it does not involve the operating conditions of the entire freewheeling circuit including the IGCT gate drive turn-off circuit. influences

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