Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Silylene/graphene composite material, and preparation method and applications thereof

A composite material, graphene technology, applied in electrical components, battery electrodes, non-aqueous electrolyte batteries and other directions, can solve the problem of no silicene/graphene composite material method and application, achieve high industrial application value, not easy to transfer, The preparation process is environmentally friendly and pollution-free

Inactive Publication Date: 2017-03-22
CHENDU NEW KELI CHEM SCI CO LTD
View PDF3 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In summary, there is no silicene / graphene composite material in the prior art, let alone a method and application for preparing silicene / graphene composite material

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] This embodiment includes the following steps:

[0039] (1) Clean silicon nanoparticles and graphite particles. The particle size of the selected silicon nanoparticles is 5 nm, and the graphite particles are flake graphite with an average particle size of graphite particles of 0.9 mm.

[0040] Cleaning silicon nanoparticles includes the following steps: first, ultrasonically for 0.5 minutes in HF solution with a solution concentration of 3.5% to remove silicon oxide on the surface of silicon nanoparticles, and finally rinse with deionized water to remove HF residual liquid. The purity at 80°C is 99.9%, the ambient pressure of argon is 100Pa and the silicon nanoparticles are dried under the protection of argon.

[0041] (2) Using the evaporation method, silicon nanoparticles are placed in a vacuum chamber, and the background vacuum is controlled to be 1.0×10 -3 Pa, using resistance wire evaporation, using a crystal oscillator to monitor the coating process, setting the ...

Embodiment 2

[0047] This embodiment includes the following steps:

[0048] (1) Clean silicon nanoparticles and graphite particles. The particle size of the selected silicon nanoparticles is 10 nm, and the graphite particles are expanded graphite with an average particle size of graphite particles of 0.5 mm.

[0049] Cleaning silicon nanoparticles includes the following steps: first, ultrasonically in HF solution with a solution concentration of 4% for 0.5 minutes to remove silicon oxide on the surface of silicon nanoparticles, and finally rinse with deionized water to remove HF residual liquid. The purity at 85 °C is 99.9%, the ambient pressure of argon is 300Pa and the silicon nanoparticles are dried under the protection of argon.

[0050] (2) Using the evaporation method, silicon nanoparticles are placed in a vacuum chamber, and the background vacuum is controlled to be 1.0×10 -3 Pa, using resistance wire evaporation, using a crystal oscillator to monitor the coating process, setting t...

Embodiment 3

[0056] This embodiment includes the following steps:

[0057] (1) Clean silicon nanoparticles and graphite particles. The particle size of the selected silicon nanoparticles is 10 nm, and the graphite particles are highly oriented graphite with an average particle size of graphite particles of 0.5 mm.

[0058] Cleaning silicon nanoparticles includes the following steps: first, ultrasonically in 3.5% HF solution for 1 minute to remove silicon oxide on the surface of silicon nanoparticles, and finally rinse with deionized water to remove HF residual liquid. The purity at 80 °C is 99.9%, the ambient pressure of argon is 100~1000Pa and the silicon nanoparticles are dried under the protection of argon.

[0059] (2) Using the sputtering method, put the silicon nanoparticles into the vacuum chamber, and control the background vacuum to be 1.0×10 -3 Pa, use Mo metal target, use crystal oscillator to monitor the coating process, DC power supply as sputtering power supply, control DC ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
particle diameteraaaaaaaaaa
particle sizeaaaaaaaaaa
Login to View More

Abstract

The invention provides a silylene / graphene composite material, and a preparation method and applications thereof. According to the preparation method, a silicon material and a graphene material are mixed, and are processed with high shear stress generated at the interfaces between screw rod engaged screw elements in extruder screw rotating process; the silicon material is taken as a grinding medium of the graphene material; and at the same time, relatively strong Van der Waals bonds are formed between the silicon material and graphene sheets, and rearrangement of silicon atoms on the graphene sheets is realized because of the sheet characteristics of graphene so as to form the silylene / graphene composite material. Mechanical exfoliation and physical shearing are adopted, exfoliation of graphene sheets and growth of silylene are completed via one step operation at the same time, complex high vacuum silylene growth technology is avoided, application of gas materials which are capable of inducing heavy pollution is avoided, cost is reduced, industrial application value is extremely high, and the silylene / graphene composite material is suitable to be taken as a lithium battery anode material.

Description

technical field [0001] The invention relates to the field of nanomaterial preparation, in particular to a silicene / graphene composite material and its preparation method and application. Background technique [0002] Graphene is a single atom thick and has sp 2 The flat plate structure of bonded carbon atoms, in theory, has a perfect hexagonal network structure, showing excellent electronic stability, thermal conductivity, optical properties, mechanical properties, etc. In 2004, two scientists from the University of Manchester in the United Kingdom discovered graphene using the method of micromechanical exfoliation, and won the Nobel Prize in Physics in 2010. Since the discovery of graphene, due to its excellent performance and huge market application prospects, it has triggered a research boom in the fields of physics and material science. [0003] Silicon and carbon belong to Group IV elements of the periodic table of elements, and also occupy an extremely important posi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01M4/583H01M4/38H01M10/052
CPCH01M4/38H01M4/583H01M10/052Y02E60/10
Inventor 陈庆曾军堂王镭迪
Owner CHENDU NEW KELI CHEM SCI CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products