A photoresist developer

A developer and photoresist technology, applied in optics, photography, optomechanical equipment, etc., can solve the problems of poor developer process margin, unstable developing performance, and limited photoresist types, etc., and achieve good developing effect, The effect of developing clear graphics and excellent process margin

Active Publication Date: 2019-06-28
绵阳艾萨斯电子材料有限公司
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the prior art, after successive development of different photoresists, the development performance of the developer will become unstable for each photoresist after the development treatment, and the development effect will gradually deteriorate. Only by changing a new developing solution can the development of new photoresist be carried out, and it cannot be used for the treatment of various photoresists only by adjusting the exposure amount and film thickness. The process margin of this kind of developing solution is poor. Adaptable photoresist types are limited

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A photoresist developer
  • A photoresist developer
  • A photoresist developer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] The developing solution is 5 parts by weight of nonionic surfactant and 3 parts by weight of inorganic alkali, and 92 parts by weight of water. Inorganic bases are common alkali metal hydroxides, weakly basic compounds, etc. All choose potassium hydroxide as the alkaline compound of developing solution for convenience of comparative examples.

Embodiment 2

[0028] The developing solution is 8 parts by weight of nonionic surfactant and 5 parts by weight of potassium hydroxide, and 87 parts by weight of water.

Embodiment 3

[0030] The developing solution is 6 parts by weight of nonionic surfactant and 3.5 parts by weight of potassium hydroxide, and 90.5 parts by weight of water.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a photoresist developing solution, which comprises water, a nonionic surfactant and inorganic base, wherein the nonionic surfactant comprises castor oil polyoxyethylene ether and a chemical compound shown in a structural formula I in the description. The developing solution provided by the invention has an excellent process redundancy, can be used for process of various photoresist only by regulating exposure quantity and film thickness, and has a long developing aging and a wide application range of developing.

Description

technical field [0001] The invention relates to the field of photoresist developing solution used in the manufacture of semiconductor devices, flat panel displays, LEDs, inverted packaging, thorns and precision sensors. Background technique [0002] Photoresist (also known as photoresist) refers to an etching-resistant thin film material whose solubility changes through irradiation or radiation of ultraviolet light, excimer laser, electron beam, ion beam, X-ray and other light sources. Development is the process of removing exposed photoresist. To avoid photoresist changes in its chemical structure due to other possible side reactions, development should be performed as soon as possible after exposure. The photoresist is often developed using a developer. [0003] The existing common developer composition is generally a combination of surfactants, alkaline compounds and water, and the purpose of its development treatment is generally to obtain graphics with no residue and ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/32
CPCG03F7/322
Inventor 罗利
Owner 绵阳艾萨斯电子材料有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap