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The preparation method of qled

A surface treatment and ultraviolet lamp technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of interface defects of electron transport layers, affecting the luminous performance and stability of QLED devices, and reduce the interface defect state and long-term use. The effect of life and good luminous efficiency

Active Publication Date: 2019-08-02
TCL CORPORATION
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Problems solved by technology

[0005] The purpose of the present invention is to provide a method for preparing a QLED, and the QLED prepared according to the method, aiming to solve the problem that existing QLEDs have electron transport layer interface defects that affect the luminous performance and stability of QLED devices

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  • The preparation method of qled
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Embodiment Construction

[0011] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0012] to combine figure 1 , the embodiment of the present invention provides a method for preparing a QLED. Before depositing a light-emitting layer on the electron transport layer 3, the surface treatment of the electron transport layer 3 includes the following steps: subjecting the electron transport layer 3 to oxygen plasma Bulk pretreatment or ozone treatment, and ultraviolet lamp radiation treatment, wherein the photon energy of the ultraviolet lamp radiation treatment is greater than the effective energy band gap of the electron transport material.

[0013] In view of the fact that ...

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Abstract

The invention provides a preparation method of a QLED. The surface of an electron transmission layer is treated before a light emitting layer is deposited on the electron transmission layer. The method comprises the following steps that oxygen plasma pretreatment or ozone treatment and ultraviolet lamp radiation treatment is carried out on the electron transmission layer, and the photo energy of the ultraviolet lamp radiation treatment is greater than the effective band gap of an electron transmission material. The preparation method of the QLED can be used to reduce the concentration of surface defects of the electron transmission layer material and remove organic residual impurities, further reduce exciton quenching caused by surface defects of the electron transmission layer, and improve the light emitting efficiency and service life of a QLED device effectively.

Description

technical field [0001] The invention belongs to the field of display technology, in particular to a method for preparing a QLED. Background technique [0002] Inorganic nanocrystalline quantum dot luminescent materials have the advantages of saturated color of emitted light and adjustable wavelength, and high photoluminescence and electroluminescence quantum yields, which are suitable for preparing high-performance display devices. In addition, from the perspective of preparation technology, quantum dot luminescent materials can be prepared into films by spin coating, printing, printing equipment and other solution processing methods under non-vacuum conditions. Therefore, quantum dot light-emitting diodes (QLEDs) prepared with quantum dot films have become a strong competitor for next-generation display technologies. [0003] Generally, a QLED device includes an anode, a hole injection and transport layer, a light emitting layer, an electron transport and injection layer a...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/06
CPCH01L33/005H01L33/06
Inventor 陈崧钱磊杨一行曹蔚然向超宇
Owner TCL CORPORATION
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